Silicon npn rf transistor Infineon BFP 405F H6327 designed for low noise and high frequency circuits

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Product Description

Product Overview

The BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides cost competitiveness without compromising ease of use.

Product Attributes

Brand: Infineon
Material: Silicon
Certifications: Qualified for industrial applications according to JEDEC47/20/22
Sensitive Device: ESD (Electrostatic discharge) sensitive, observe handling precautions

Technical Specifications

Parameter	Symbol	Values	Unit	Note or test condition
Absolute Maximum Ratings
Collector emitter voltage	VCEO	4.5	V	Open base
Collector emitter voltage	VCES	15	V	E-B short circuited
Collector base voltage	VCBO	15	V	Open emitter
Emitter base voltage	VEBO	1.5	V	Open collector
Base current	IB	3	mA
Collector current	IC	25	mA
Total power dissipation	Ptot	75	mW	TS 112 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 150	C
Thermal Characteristics
Junction - soldering point thermal resistance	RthJS	500	K/W
DC Characteristics
Collector emitter breakdown voltage	V(BR)CEO	4	V	IC = 1 mA, IB = 0, open base
Collector emitter leakage current	ICES	10	A	VCE = 15 V, VBE = 0, E-B short circuited
Collector base leakage current	ICBO	100	nA	VCB = 5 V, IE = 0, open emitter
Emitter base leakage current	IEBO	1	A	VEB = 0.5 V, IC = 0, open collector
DC current gain	hFE	60 130		VCE = 4 V, IC = 5 mA, pulse measured
General AC Characteristics
Transition frequency	fT	18 25	GHz	VCE = 3 V, IC = 10 mA, f = 2 GHz
Collector base capacitance	CCB	0.05 0.1	pF	VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitance	CCE	0.2	pF	VCE = 2 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitance	CEB	0.25	pF	VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded
Frequency Dependent AC Characteristics (VCE = 2 V, f = 1.8 GHz)
Maximum power gain	Gms	22.5	dB	IC = 5 mA
Minimum noise figure	NFmin	1.25	dB	IC = 2 mA
3rd order intercept point at output	OIP3	14	dBm	IC = 5 mA, ZS = ZL = 50