High gain low noise silicon bipolar RF transistor Infineon BFP540FESDH6327XTSA1 with ESD protection
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Product Description
Product Overview
The BFP540FESD is a low-noise silicon bipolar RF transistor designed for ESD-protected high-gain low-noise amplifiers. It offers excellent ESD performance with a typical value of 1000 V (HBM) and outstanding Gms of 20 dB with a minimum noise figure (NFmin) of 0.9 dB. This Pb-free, halogen-free, and RoHS-compliant component is available in a thin small flat package with visible leads and has an AEC-Q101 qualification report available. Observe handling precautions as it is an ESD sensitive device.
Product Attributes
- Brand: Infineon Technologies
- Package: TSFP-4
- Certifications: AEC-Q101
- Material: Silicon Bipolar
- Compliance: Pb-free (ROHS compliant), halogen-free
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector-emitter voltage (TA = 25 C) | VCEO | 4.5 | V | |
| Collector-emitter voltage (TA = -55 C) | VCEO | 4 | V | |
| Collector-emitter voltage | VCES | 10 | V | |
| Collector-base voltage | VCBO | 10 | V | |
| Emitter-base voltage | VEBO | 1 | V | |
| Collector current | IC | 80 | mA | |
| Base current | IB | 8 | mA | |
| Total power dissipation (TS 80 C) | Ptot | 250 | mW | 1TS is measured on the emitter lead at the soldering point to the pcb |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Junction - soldering point thermal resistance | RthJS | 280 | K/W | 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) |
| Collector-emitter breakdown voltage (IC = 1 mA, IB = 0) | V(BR)CEO | 4.5 | V | min. |
| Collector-emitter breakdown voltage (IC = 1 mA, IB = 0) | V(BR)CEO | 5 | V | typ. |
| Collector-emitter cutoff current (VCE = 10 V, VBE = 0) | ICES | 10 | A | max. |
| Collector-base cutoff current (VCB = 5 V, IE = 0) | ICBO | 100 | nA | max. |
| Emitter-base cutoff current (VEB = 0.5 V, IC = 0) | IEBO | 10 | A | max. |
| DC current gain (IC = 20 mA, VCE = 3.5 V, pulse measured) | hFE | 50 | - | min. |
| DC current gain (IC = 20 mA, VCE = 3.5 V, pulse measured) | hFE | 110 | - | typ. |
| DC current gain (IC = 20 mA, VCE = 3.5 V, pulse measured) | hFE | 170 | - | max. |
| Transition frequency (IC = 50 mA, VCE = 4 V, f = 1 GHz) | fT | 21 | GHz | min. |
| Transition frequency (IC = 50 mA, VCE = 4 V, f = 1 GHz) | fT | 30 | GHz | typ. |
| Collector-base capacitance (VCB = 2 V, f = 1 MHz, VBE = 0, emitter grounded) | Ccb | 0.16 | pF | typ. |
| Collector-base capacitance (VCB = 2 V, f = 1 MHz, VBE = 0, emitter grounded) | Ccb | 0.26 | pF | max. |
| Collector emitter capacitance (VCE = 2 V, f = 1 MHz, VBE = 0, base grounded) | Cce | 0.4 | pF | typ. |
| Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded) | Ceb | 0.55 | pF | typ. |
| Minimum noise figure (IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt) | NFmin | 0.9 | dB | typ. |
| Minimum noise figure (IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt) | NFmin | 1.3 | dB | typ. |
| Minimum noise figure (IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt) | NFmin | 1.4 | dB | max. |
| Power gain, maximum stable (IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz) | Gms | 20 | dB | typ. |
| Power gain, maximum available (IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz) | Gma | 14.5 | dB | typ. |
| Transducer gain (IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz) | |S21e| | 15.5 | dB | typ. |
| Transducer gain (IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz) | |S21e| | 18 | dB | max. |
| Transducer gain (IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 3GHz) | |S21e| | 13 | dB | typ. |
| Third order intercept point at output (VCE = 2 V, IC = 20 mA, ZS = ZL = 50, f = 1.8GHz) | IP3 | 24.5 | dBm | typ. 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz |
| 1dB compression point at output (IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz) | P-1dB | 11 | dBm | typ. |
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