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Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The BFP760 is a low-noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF and protection device applications.

Product Attributes

  • Brand: Infineon Technologies AG
  • Material: Silicon Germanium (SiGe)
  • Package: SOT343

Technical Specifications

ParameterSymbolMinTypMaxUnitConditionsPage
Collector Current vs. Collector Emitter VoltageIC = f (VCE)IB = Parameter in A15
DC Current GainhFE = f (IC)VCE = 3 V15
Collector Current vs. Base Emitter VoltageIC = f (VBE)VCE = 2 V16
Base Current vs. Base Emitter Forward VoltageIB = f (VBE)VCE = 2 V16
Base Current vs. Base Emitter Reverse VoltageIB = f (VEB)VCE = 2 V17
Transition FrequencyfT = f (IC)GHzf = 1 GHz, VCE = Parameter in V18
3rd Order Intercept PointOIP3 = f (IC)dBmZS = ZL= 50 , VCE, f = Parameters18
3rd Order Intercept Point at outputOIP3 [dBm] = f (IC, VCE)dBmZS = ZL = 50 , f = 5.5 GHz19
Compression Point at outputOP1dB [dBm] = f (IC, VCE)dBmZS = ZL = 50 , f = 5.5 GHz19
Collector Base CapacitanceCCB = f (VCB)pFf = 1 MHz20
GainGma, Gms, IS21I = f (f)VCE = 3 V, IC = 30 mA20
Maximum Power GainGmax = f (IC)dBVCE = 3 V, f = Parameter in GHz21
Maximum Power GainGmax = f (VCE)dBIC = 30 mA, f = Parameter in GHz21
Input Reflection CoefficientS11 = f (f)VCE = 3 V, IC = 10 / 30 mA22
Source Impedance for Minimum Noise FigureZopt = f (f)VCE = 3 V, IC = 10 / 30 mA22
Output Reflection CoefficientS22 = f (f)VCE = 3 V, IC = 10 / 30 mA23
Noise Figure minNFmin = f (f)dBVCE = 3 V, IC = 10 / 30 mA, ZS = Zopt23
Noise Figure minNFmin = f (IC)dBVCE = 3 V, ZS = Zopt, f = Parameter in GHz24
Noise Figure 50 OhmNF50 = f (IC)dBVCE = 3 V, ZS = 50 , f = Parameter in GHz24
Maximum RatingsTA = 25 C (unless otherwise specified)6

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Company Hefei Purple Horn E-Commerce Co., Ltd.
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