NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching and Interface Circuits
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Product Description
Product Overview
The BCR108 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package. All variants are Pb-free (RoHS compliant) and qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Certifications: AEC Q101, RoHS compliant
- Material: Silicon
Technical Specifications
| Parameter | Symbol | BCR108 | BCR108S | BCR108W | Unit |
| Collector-emitter voltage | VCEO | 50 | 50 | 50 | V |
| Collector-base voltage | VCBO | 50 | 50 | 50 | V |
| Input forward voltage | Vi(fwd) | 20 | 20 | 20 | V |
| Input reverse voltage | Vi(rev) | 5 | 5 | 5 | V |
| Collector current | IC | 100 | 100 | 100 | mA |
| Total power dissipation (TS 102C) | Ptot | 200 | - | - | mW |
| Total power dissipation (TS 115C) | Ptot | - | 250 | - | mW |
| Total power dissipation (TS 124C) | Ptot | - | - | 250 | mW |
| Junction temperature | Tj | 150 | 150 | 150 | C |
| Storage temperature | Tstg | -65 ... 150 | -65 ... 150 | -65 ... 150 | C |
| Junction - soldering point thermal resistance | RthJS | 240 | 140 | 105 | K/W |
| Collector-emitter breakdown voltage (IC = 100 A, IB = 0) | V(BR)CEO | 50 | 50 | 50 | V |
| Collector-base breakdown voltage (IC = 10 A, IE = 0) | V(BR)CBO | 50 | 50 | 50 | V |
| Collector-base cutoff current (VCB = 40 V, IE = 0) | ICBO | - | - | 100 | nA |
| Emitter-base cutoff current (VEB = 5 V, IC = 0) | IEBO | - | - | 164 | A |
| DC current gain (IC = 5 mA, VCE = 5 V) | hFE | 70 | 70 | 70 | - |
| Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA) | VCEsat | - | - | 0.3 | V |
| Input off voltage (IC = 100 A, VCE = 5 V) | Vi(off) | 0.4 - 0.8 | 0.4 - 0.8 | 0.4 - 0.8 | V |
| Input on voltage (IC = 2 mA, VCE = 0.3 V) | Vi(on) | 0.5 - 1.1 | 0.5 - 1.1 | 0.5 - 1.1 | V |
| Input resistor R1 | R1 | 1.5 - 2.9 | 1.5 - 2.9 | 1.5 - 2.9 | k |
| Resistor ratio R1/R2 | R1/R2 | 0.042 - 0.052 | 0.042 - 0.052 | 0.042 - 0.052 | - |
| Transition frequency (IC = 10 mA, VCE = 5 V, f = 1 MHz) | fT | 170 | 170 | 170 | MHz |
| Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | 2 | 2 | 2 | pF |
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