Silicon digital transistor Infineon BCR 112 E6327 featuring AEC Q101 certification and RoHS compliance

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Product Description

Product Overview

The BCR112 is an NPN silicon digital transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=4.7k, R2=4.7k) and is Pb-free and RoHS compliant, qualified according to AEC Q101. Available in SOT23 and SOT323 packages.

Product Attributes

Brand: Infineon Technologies
Certifications: AEC Q101, RoHS compliant
Material: Silicon
Package Types: SOT23, SOT323

Technical Specifications

Parameter	Symbol	BCR112/BCR112W	Unit	Notes
Collector-emitter voltage	VCEO	50	V
Collector-base voltage	VCBO	50	V
Input forward voltage	Vi(fwd)	30	V
Input reverse voltage	Vi(rev)	10	V
Collector current	IC	100	mA
Total power dissipation (BCR112, TS 102C)	Ptot	200	mW
Total power dissipation (BCR112W, TS 124C)	Ptot	250	mW
Junction temperature	Tj	150	C
Storage temperature	Tstg	-65 ... 150	C
Junction - soldering point thermal resistance (BCR112)	RthJS	240	K/W	1)
Junction - soldering point thermal resistance (BCR112W)	RthJS	105	K/W	1)
Collector-emitter breakdown voltage (IC = 100 A, IB = 0)	V(BR)CEO	50	V
Collector-base breakdown voltage (IC = 10 A, IE = 0)	V(BR)CBO	50	V
Collector-base cutoff current (VCB = 40 V, IE = 0)	ICBO	-	100	nA
Emitter-base cutoff current (VEB = 10 V, IC = 0)	IEBO	-	1.61	mA
DC current gain (IC = 5 mA, VCE = 5 V)	hFE	20	-	1)
Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA)	VCEsat	-	0.3	V	1)
Input off voltage (IC = 100 A, VCE = 5 V)	Vi(off)	0.8	1.5	V
Input on voltage (IC = 2 mA, VCE = 0.3 V)	Vi(on)	1	2.5	V
Input resistor R1	R1	3.2	6.2	k
Resistor ratio R1/R2	R1/R2	0.9	1.1	-
Transition frequency (IC = 10 mA, VCE = 5 V, f = 100 MHz)	fT	-	140	MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)	Ccb	-	3	pF