Switching Circuit NPN Transistor Featuring Built-in Bias Resistor Infineon BCR146E6327HTSA1 SOT23 Package
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Product Description
Product Overview
The BCR146 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor (R1=47k, R2=22k) and is Pb-free (RoHS compliant), qualified according to AEC Q101. This transistor is supplied in a SOT23 package.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT23
- Certifications: AEC Q101
- Compliance: Pb-free (RoHS compliant)
- Built-in Bias Resistor: R1=47k, R2=22k
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes | |
| Maximum Ratings | |||||
| Collector-emitter voltage | VCEO | 50 | V | ||
| Collector-base voltage | VCBO | 50 | V | ||
| Input forward voltage | Vi(fwd) | 80 | |||
| Input reverse voltage | Vi(rev) | 10 | |||
| Collector current | IC | 70 | mA | ||
| Total power dissipation (TS 102C) | Ptot | 200 | mW | ||
| Junction temperature | Tj | 150 | C | ||
| Storage temperature | Tstg | -65 ... 150 | C | ||
| Thermal Resistance | |||||
| Junction - soldering point | RthJS | 240 | K/W | 1) | |
| DC Characteristics (TA = 25C, unless otherwise specified) | |||||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC = 100 A, IB = 0 | |
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 10 A, IE = 0 | |
| Collector-base cutoff current | ICBO | - | 100 | nA | VCB = 40 V, IE = 0 |
| Emitter-base cutoff current | IEBO | - | 220 | A | VEB = 10 V, IC = 0 |
| DC current gain | hFE | 50 | - | IC = 5 mA, VCE = 5 V, 2) | |
| Collector-emitter saturation voltage | VCEsat | - | 0.3 | V | IC = 10 mA, IB = 0.5 mA, 2) |
| Input off voltage | Vi(off) | 1.2 | 2.6 | V | IC = 100 A, VCE = 5 V |
| Input on voltage | Vi(on) | 1.5 | 4 | V | IC = 2 mA, VCE = 0.3 V |
| Input resistor R1 | R1 | 32 | 62 | k | |
| Resistor ratio R1/R2 | R1/R2 | 1.92 | 2.36 | - | |
| AC Characteristics | |||||
| Transition frequency | fT | - | 150 | MHz | IC = 10 mA, VCE = 5 V, f = 100 MHz |
| Collector-base capacitance | Ccb | - | 3 | pF | VCB = 10 V, f = 1 MHz |
Notes:
1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2) Pulse test: t < 300s; D < 2%
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