Reverse conducting igbt Infineon IHW30N135R5 with trenchstop technology offering low emi and stable temperature performance
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Product Description
Product Overview
The IHW30N135R5 is a Reverse Conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic body diode with low forward voltage optimized for soft commutation. It utilizes TRENCHSTOP technology for excellent ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free, RoHS compliant, and halogen-free.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP
- Certifications: Pb-free lead plating, RoHS compliant, Halogen free (according to IEC 61249-2-21)
- Applications: Induction cooking, Microwave ovens
Technical Specifications
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
| IHW30N135R5 | 1350 | 30 | 1.65 | 175 | H30PR5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1350 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 25C | 1.85 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 5.1 - 6.4 | V |
| Zero gate voltage collector current | ICES | VCE = 1350V, VGE = 0V, Tvj = 25C | 630 | µA |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | 23.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1810 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 50 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 40 | pF |
| Gate charge | QG | VCC = 1080V, IC = 30.0A, VGE = 15V | 235.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 310 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 120 | ns |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 1.40 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.17 | mJ |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 385 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 295 | ns |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 2.70 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.57 | mJ |
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