Power semiconductor device Infineon IKW75N65ES5 featuring trenchstop 5 technology and rapid 1 diode
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Product Description
Product Overview
The Infineon TRENCHSTOPTM 5 IKW75N65ES5 is a high-speed, soft-switching IGBT designed for hard and soft switching applications. It features S5 technology for smooth switching, a very low VCEsat of 1.42V at nominal current, and a 650V breakdown voltage. This IGBT is copacked with a full current-rated RAPID 1 fast and soft antiparallel diode, offering a plug-and-play replacement for previous generation IGBTs. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode: RAPID 1
- Compliance: RoHS compliant, Pb-free lead plating
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKW75N65ES5 | 650V | 80.0A | 1.42V | 175C | K75EES5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 75.0A, Tvj = 25C | 1.42 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 75.0A, Tvj = 25C | 1.50 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 3000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75.0A | 100.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 130 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 17 | pF |
| Gate charge | QG | VCC = 520V, IC = 75.0A, VGE = 15V | 164.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 40 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 46 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 5.6, L = 30nH | 144 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 5.6, L = 30nH | 41 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 2.40 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 5.6, L = 30nH | 0.95 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 18.0, L = 30nH | 3.35 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | 85 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | 1.80 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | 31.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1230A/s | -2170 | A/s |
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