PNP Silicon Digital Transistor Infineon BCR166W Ideal for Interface Circuits and Driver Applications

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Product Description

Product Overview

The BCR166 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 4.7 k, R2 = 47 k) and is Pb-free, complying with RoHS standards. This component is qualified according to AEC Q101.

Product Attributes

Brand: Infineon Technologies
Certifications: AEC Q101, RoHS compliant
Package Types: SOT23, SOT323

Technical Specifications

Parameter	Symbol	BCR166 (SOT23)	BCR166W (SOT323)	Unit	Notes
Collector-emitter voltage	VCEO	50		V
Collector-base voltage	VCBO	50		V
Input forward voltage	Vi(fwd)	30		V
Input reverse voltage	Vi(rev)	5		V
Collector current	IC	100		mA
Total power dissipation (TS 102C)	Ptot	200	-	mW
Total power dissipation (TS 124C)	Ptot	-	250	mW
Junction temperature	Tj	150		C
Storage temperature	Tstg	-65 ... 150		C
Junction - soldering point thermal resistance	RthJS	240	105	K/W	1)
Collector-emitter breakdown voltage	V(BR)CEO	50		V	IC = 100 A, IB = 0
Collector-base breakdown voltage	V(BR)CBO	50		V	IC = 10 A, IE = 0
Collector-base cutoff current	ICBO	100		nA	VCB = 40 V, IE = 0
Emitter-base cutoff current	IEBO	155		A	VEB = 5 V, IC = 0
DC current gain	hFE	70		-	IC = 5 mA, VCE = 5 V 2)
Collector-emitter saturation voltage	VCEsat	0.3		V	IC = 10 mA, IB = 0.5 mA 2)
Input off voltage	Vi(off)	0.4 - 0.8		V	IC = 100 A, VCE = 5 V
Input on voltage	Vi(on)	0.5 - 1.4		V	IC = 2 mA, VCE = 0.3 V
Input resistor	R1	3.2 - 6.2		k
Resistor ratio	R1/R2	0.09 - 0.11		-
Transition frequency	fT	160		MHz	IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance	Ccb	3		pF	VCB = 10 V, f = 1 MHz