High power density EasyPIM module Infineon FP25R12W2T7 with TRENCHSTOP IGBT7 and solder contact technology
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MOQ:
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Delivery Time:
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Product Description
EasyPIM Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC
The EasyPIM module is designed for auxiliary inverters, air conditioning systems, and motor drives. It features TRENCHSTOP IGBT7 technology for low VCEsat and overload operation up to 175C. The module boasts a 2.5 kV AC 1min insulation, an Al2O3 substrate with low thermal resistance, high power density, and a compact design utilizing solder contact technology.
Product Attributes
- Brand: Infineon
- Product Code: FP25R12W2T7
- Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, NTC
Technical Specifications
| Component | Parameter | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| IGBT, Inverter | VCES | 1200 | V | Tvj = 25C | ||
| ICDC | 25 | A | TH = 105C, Tvj max = 175C | |||
| ICRM | 50 | A | tP = 1 ms | |||
| VGES | +/-20 | V | ||||
| VCE sat | 1.60 | 1.82 | V | IC = 25 A, VGE = 15 V | ||
| VGEth | 5.15 | 5.80 | 6.45 | V | IC = 0,525 mA, VCE = VGE, Tvj = 25C | |
| QG | 0.395 | C | VGE = -15 / 15 V, VCE = 600 V | |||
| RGint | 0.0 | Tvj = 25C | ||||
| Cies | 4.77 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| Cres | 0.017 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| ICES | 0.0056 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C | |||
| IGES | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C | |||
| Eon | 1.78 | 3.18 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, di/dt = 650 A/s, VGE = -15 / 15 V, RGon = 6,2 | ||
| Eoff | 1.68 | 3.20 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 6,2 | ||
| Diode, Inverter | VRRM | 1200 | V | Tvj = 25C | ||
| IF | 25 | A | ||||
| IFRM | 50 | A | tP = 1 ms | |||
| It | 63.0 | 72.5 | As | VR = 0 V, tP = 10 ms | ||
| VF | 1.63 | 1.83 | V | IF = 25 A, VGE = 0 V | ||
| Erec | 0.94 | 1.85 | mJ | IF = 25 A, - diF/dt = 650 A/s, VR = 600 V, VGE = -15 V | ||
| Diode, Rectifier | VRRM | 1600 | V | Tvj = 25C | ||
| IFRMSM | 50 | A | TH = 100C | |||
| IFSM | 370 | 450 | A | tp = 10 ms | ||
| It | 685 | 1010 | As | tp = 10 ms | ||
| VF | 0.88 | V | Tvj = 150C, IF = 25 A | |||
| IR | 1.00 | mA | Tvj = 150C, VR = 1600 V | |||
| RthJH | 1.36 | K/W | per diode | |||
| IGBT, Brake-Chopper | VCES | 1200 | V | Tvj = 25C | ||
| ICDC | 25 | A | TH = 105C, Tvj max = 175C | |||
| ICRM | 50 | A | tP = 1 ms | |||
| VGES | +/-20 | V | ||||
| VCE sat | 1.60 | 1.82 | V | IC = 25 A, VGE = 15 V | ||
| VGEth | 5.15 | 5.80 | 6.45 | V | IC = 0,525 mA, VCE = VGE, Tvj = 25C | |
| QG | 0.395 | C | VGE = -15 / 15 V, VCE = 600 V | |||
| RGint | 0.0 | Tvj = 25C | ||||
| Cies | 4.77 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| Cres | 0.017 | nF | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |||
| ICES | 0.0056 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C | |||
| IGES | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C | |||
| Eon | 1.66 | 2.94 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, di/dt = 650 A/s, VGE = -15 / 15 V, RGon = 6,2 | ||
| Eoff | 1.73 | 3.32 | mJ | IC = 25 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 6,2 | ||
| Diode, Brake-Chopper | VRRM | 1200 | V | Tvj = 25C | ||
| IF | 10 | A | ||||
| IFRM | 20 | A | tP = 1 ms | |||
| It | As | VR = 0 | ||||
| RthJH | 1.73 | K/W | per diode | |||
| Tvj op | -40 | 175 | C |
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