Powerful 62mm C Series IGBT Module Infineon FF400R17KE4 with Trench Fieldstop IGBT4 Technology
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Product Description
Product Overview
The FF400R17KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode technology. It offers an extended operating temperature, low VCEsat with a positive temperature coefficient, and high robustness, making it suitable for high-power converters, motor drives, UPS systems, and wind turbines. The module boasts excellent electrical and mechanical features, including high insulation strength, large creepage and clearance distances, and an isolated base plate.
Product Attributes
- Module Label Code: DMX
- Barcode Code: Code 128
- Material of module baseplate: Cu
- Internal isolation: Basic insulation (class 1, IEC 61140)
- Material: Al2O3
- Comparative tracking index (CTI): > 400
- Weight: 340 g
Technical Specifications
| Parameter | Value | Unit | Notes |
| IGBT, Inverter | |||
| Collector-emitter voltage (VCES) | 1700 | V | Tvj = 25C |
| Continuous DC collector current (IC nom) | 400 | A | TC = 95C, Tvj max = 175C |
| Repetitive peak collector current (ICRM) | 800 | A | tP = 1 ms |
| Gate-emitter peak voltage (VGES) | +/-20 | V | |
| Collector-emitter saturation voltage (VCE sat) | 1.95 - 2.45 | V | IC = 400 A, VGE = 15 V, Tvj = 25C - 150C |
| Gate threshold voltage (VGEth) | 5.35 - 6.25 | V | IC = 16.0 mA, VCE = VGE, Tvj = 25C |
| Gate charge (QG) | 4.10 | C | VGE = -15 V ... +15 V |
| Internal gate resistor (RGint) | 1.9 | Tvj = 25C | |
| Input capacitance (Cies) | 36.0 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance (Cres) | 1.15 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current (ICES) | 1.0 | mA | VCE = 1700 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current (IGES) | 400 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time (td on) | 0.24 - 0.27 | s | IC = 400 A, VCE = 900 V, VGE = 15 V, RGon = 0.82 , Tvj = 25C - 150C |
| Rise time (tr) | 0.04 - 0.05 | s | IC = 400 A, VCE = 900 V, VGE = 15 V, RGon = 0.82 , Tvj = 25C - 150C |
| Turn-off delay time (td off) | 0.50 - 0.68 | s | IC = 400 A, VCE = 900 V, VGE = 15 V, RGoff = 0.82 , Tvj = 25C - 150C |
| Fall time (tf) | 0.09 - 0.17 | s | IC = 400 A, VCE = 900 V, VGE = 15 V, RGoff = 0.82 , Tvj = 25C - 150C |
| Turn-on energy loss per pulse (Eon) | 89.0 - 140 | mJ | IC = 400 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 8000 A/s, RGon = 0.82 , Tvj = 25C - 150C |
| Turn-off energy loss per pulse (Eoff) | 73.0 - 130 | mJ | IC = 400 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3200 V/s, RGoff = 0.82 , Tvj = 25C - 150C |
| Short circuit data (ISC) | 1800 | A | VGE 15 V, VCC = 1000 V, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (RthJC) | 0.0632 | K/W | per IGBT |
| Thermal resistance, case to heatsink (RthCH) | 0.0271 | K/W | per IGBT, Paste = 1 W/(mK) |
| Operating temperature (Tvj op) | -40 - 150 | C | |
| Diode, Inverter | |||
| Repetitive peak reverse voltage (VRRM) | 1700 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 400 | A | |
| Repetitive peak forward current (IFRM) | 800 | A | tP = 1 ms |
| It value | 33000 - 28500 | As | VR = 0 V, tP = 10 ms, Tvj = 125C - 150C |
| Forward voltage (VF) | 1.80 - 2.20 | V | IF = 400 A, VGE = 0 V, Tvj = 25C - 150C |
| Peak reverse recovery current (IRM) | 605 - 640 | A | IF = 400 A, - diF/dt = 8000 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C |
| Recovered charge (Qr) | 105 - 190 | C | IF = 400 A, - diF/dt = 8000 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C |
| Reverse recovery energy (Erec) | 55.5 - 110 | mJ | IF = 400 A, - diF/dt = 8000 A/s, VR = 900 V, VGE = -15 V, Tvj = 25C - 150C |
| Thermal resistance, junction to case (RthJC) | 0.106 | K/W | per diode |
| Thermal resistance, case to heatsink (RthCH) | 0.0260 | K/W | per diode, Paste = 1 W/(mK) |
| Operating temperature (Tvj op) | -40 - 150 | C | |
| Module | |||
| Isolation test voltage (VISOL) | 4.0 | kV | RMS, f = 50 Hz, t = 1 min. |
| Creepage distance (terminal to heatsink) | 29.0 | mm | |
| Creepage distance (terminal to terminal) | 23.0 | mm | |
| Clearance (terminal to heatsink) | 23.0 | mm | |
| Clearance (terminal to terminal) | 11.0 | mm | |
| Stray inductance module (LsCE) | 20 | nH | |
| Module lead resistance (RCC'+EE') | 0.41 | m | TC = 25C, per switch |
| Storage temperature (Tstg) | -40 - 125 | C | |
| Mounting torque for module mounting (Screw M6) | 3.00 - 6.00 | Nm | Mounting according to valid application note |
| Terminal connection torque (Screw M6) | 2.5 - 5.0 | Nm | Mounting according to valid application note |
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