600V IGBT Infineon IKA06N60T with soft fast recovery emitter controlled diode and high ruggedness
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Product Description
Product Overview
The IKA06N60T is a high-performance IGBT from Infineon's TRENCHSTOP Series, featuring Fieldstop technology and a soft, fast-recovery Emitter Controlled HE diode. Designed for 600V applications, it offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Its advanced technology ensures tight parameter distribution, high ruggedness, temperature-stable behavior, and very high switching speeds with low EMI. This product is qualified according to JEDEC standards and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TRENCHSTOP
- Technology: TRENCHSTOP and Fieldstop
- Diode Type: Emitter Controlled HE
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking | Package |
| IKA06N60T | 600V | 6A | 1.5V | 175C | K06T60 | PG-TO220-3 (FullPAK) |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VCE | Tj 25C | 600 | V |
| DC collector current | IC | TC = 25C | 10 | A |
| DC collector current | IC | TC = 100C | 6.2 | A |
| Pulsed collector current | ICpuls | tp limited by Tjmax | 18 | A |
| Diode forward current | IF | TC = 25C | 10.2 | A |
| Diode forward current | IF | TC = 100C | 6.5 | A |
| Diode pulsed current | IFpuls | tp limited by Tjmax | 18 | A |
| Gate-emitter voltage | VGE | 20 | V | |
| Short circuit withstand time | tSC | VGE = 15V, VCC 400V, Tj 150C | 5 | s |
| Power dissipation | Ptot | TC = 25C | 28 | W |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Isolation voltage | Visol | 2500 | Vrms | |
| IGBT thermal resistance, junction case | RthJC | 5.3 | K/W | |
| Diode thermal resistance, junction case | RthJCD | 6.5 | K/W | |
| Thermal resistance, junction ambient | RthJA | 80 | K/W | |
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.25mA | 600 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=6A, Tj=25C | 1.5 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=6A, Tj=175C | 1.8 | V |
| Diode forward voltage | VF | VGE=0V, IF=6A, Tj=25C | 1.6 | V |
| Diode forward voltage | VF | VGE=0V, IF=6A, Tj=175C | 1.6 | V |
| Gate-emitter threshold voltage | VGE(th) | IC=0.18mA, VCE=VGE | 4.1 | V |
| Zero gate voltage collector current | ICEs | VCE=600V,VGE=0V, Tj=25C | 40 | A |
| Zero gate voltage collector current | ICEs | VCE=600V,VGE=0V, Tj=175C | 700 | A |
| Gate-emitter leakage current | IGEs | VCE=0V,VGE=20V | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=6A | 3.6 | S |
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | 368 | pF |
| Output capacitance | Coss | 28 | pF | |
| Reverse transfer capacitance | Crss | 11 | pF | |
| Gate charge | Qg | VCC=480V, IC=6A, VGE=15V | 42 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 7 | nH |
| Short circuit collector current | IC(SC) | VGE=15V,tSC5s, VCC = 400V, Tj = 25C | 55 | A |
| Turn-on delay time | td(on) | Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | 9.4 | ns |
| Rise time | tr | 5.6 | ns | |
| Turn-off delay time | td(off) | 130 | ns | |
| Fall time | tf | 58 | ns | |
| Turn-on energy | Eon | 0.09 | mJ | |
| Turn-off energy | Eoff | 0.11 | mJ | |
| Total switching energy | Ets | 0.2 | mJ | |
| Diode reverse recovery time | trr | Tj=25C, VR=400V, IF=6A, diF/dt=550A/s | 123 | ns |
| Diode reverse recovery charge | Qrr | 190 | nC | |
| Diode peak reverse recovery current | Irr | 5.3 | A | |
| Diode peak rate of fall of reverse recovery current | dirr/dt | 450 | A/s | |
| Turn-on delay time | td(on) | Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | 8.8 | ns |
| Rise time | tr | 8.2 | ns | |
| Turn-off delay time | td(off) | 165 | ns | |
| Fall time | tf | 84 | ns | |
| Turn-on energy | Eon | 0.14 | mJ | |
| Turn-off energy | Eoff | 0.18 | mJ | |
| Total switching energy | Ets | 0.335 | mJ | |
| Diode reverse recovery time | trr | Tj=175C, VR=400V, IF=6A, diF/dt=550A/s | 180 | ns |
| Diode reverse recovery charge | Qrr | 500 | nC | |
| Diode peak reverse recovery current | Irr | 7.6 | A | |
| Diode peak rate of fall of reverse recovery current | dirr/dt | 285 | A/s |
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