Silicon Tuning Diode Infineon BBY6602VH6327XTSA1 for Mobile Communications Equipment VCO Applications
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The BBY66 series are Silicon Tuning Diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These hyperabrupt tuning diodes offer a high capacitance ratio, high Q, and low series resistance. Key advantages include a very low capacitance spread and Pb-free (RoHS compliant) packaging. The diodes are qualified according to AEC Q101 standards.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
- Qualification: AEC Q101
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BBY66-02V | Diode | SC79 | single | 0.6 | h O1s / O2s |
| BBY66-05 | Diode | SOT23 | common cathode | 1.8 | OBs |
| BBY66-05W | Diode | SOT323 | common cathode | 1.4 | OBs |
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Maximum Ratings at TA = 25C, unless otherwise specified | ||||
| Diode reverse voltage | VR | 12 | V | |
| Forward current | IF | 50 | mA | |
| Operating temperature range | Top | -55 ... 150 | C | |
| Storage temperature | Tstg | -55 ... 150 | C | |
| Electrical Characteristics at TA = 25C, unless otherwise specified | ||||
| Reverse current | IR | - | nA | VR = 10 V, max. 20 nA |
| Reverse current | IR | - | nA | VR = 10 V, TA = 65 C, max. 200 nA |
| Diode capacitance | CT | 66 | pF | VR = 1 V, f = 1 MHz, min. |
| Diode capacitance | CT | 71.5 | pF | VR = 1 V, f = 1 MHz, max. |
| Diode capacitance | CT | 33 | pF | VR = 2 V, f = 1 MHz, min. |
| Diode capacitance | CT | 38 | pF | VR = 2 V, f = 1 MHz, max. |
| Diode capacitance | CT | 19.7 | pF | VR = 3 V, f = 1 MHz, min. |
| Diode capacitance | CT | 22.2 | pF | VR = 3 V, f = 1 MHz, max. |
| Diode capacitance | CT | 12 | pF | VR = 4.5 V, f = 1 MHz, min. |
| Diode capacitance | CT | 13.5 | pF | VR = 4.5 V, f = 1 MHz, max. |
| Capacitance ratio | CT1/CT4.5 | 5 | - | VR = 1 V, VR = 4.5 V, min. |
| Capacitance ratio | CT1/CT4.5 | 5.41 | - | VR = 1 V, VR = 4.5 V, typ. |
| Series resistance | rS | - | VR = 1 V, f = 470 MHz, typ. 0.25 | |
| Series resistance | rS | 0.4 | VR = 1 V, f = 470 MHz, max. | |
| Capacitance Group | C1V min | C1V max |
|---|---|---|
| 01 | 66 pF | 69 pF |
| 02 (only BBY66-05) | 68.5 pF | 71.5 pF |
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Sellina