TrenchStop Series Power Semiconductor Infineon IGW25T120 Low Loss IGBT with Short Circuit Protection
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Product Description
IGW25T120 TrenchStop Series Power Semiconductors
The IGW25T120 is a Low Loss IGBT featuring TrenchStop and Fieldstop technology, designed for high-performance applications. It offers a short circuit withstand time of 10s and is ideal for frequency converters and uninterrupted power supplies. The TrenchStop and Fieldstop technology ensures very tight parameter distribution, high ruggedness, and stable temperature behavior. Its NPT technology facilitates easy parallel switching due to a positive temperature coefficient in VCE(sat), along with low EMI and low gate charge. This product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TrenchStop
- Technology: TrenchStop and Fieldstop, NPT
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | VCE(sat) (Tj=25C) | Tj,max | Marking | Package |
| IGW25T120 | 1200V | 50A | 1.7V | 150C | G25T120 | PG-TO-247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VC E | 1200 | V | |
| DC collector current | I C | TC = 25C | 50 | A |
| DC collector current | I C | TC = 100C | 25 | A |
| Pulsed collector current, tp limited by Tjmax | I C p u l s | 75 | A | |
| Gate-emitter voltage | V G E | 20 | V | |
| Short circuit withstand time | t SC | VGE = 15V, VCC 1200V, Tj 150C | 10 | s |
| Power dissipation | P to t | TC = 25C | 190 | W |
| Operating junction temperature | T j | -40...+150 | C | |
| Storage temperature | T st g | -55...+150 | C | |
| Soldering temperature, 1.6mm from case for 10s | 260 | C | ||
| IGBT thermal resistance, junction case | R t h JC | 0.65 | K/W | |
| IGBT thermal resistance, junction ambient | R t h JA | 40 | K/W | |
| Collector-emitter breakdown voltage | V (BR )C ES | V G E=0V, I C=500A | 1200 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=25A, T j=25C | 1.7 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=25A, T j=125C | 2.0 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=25A, T j=150C | 2.2 | V |
| Gate-emitter threshold voltage | V G E( th ) | I C=1mA, VC E=VG E | 5.0...6.5 | V |
| Zero gate voltage collector current | I C ES | VC E=1200V, V G E=0V, T j=25C | 0.25 | mA |
| Zero gate voltage collector current | I C ES | VC E=1200V, V G E=0V, T j=150C | 2.5 | mA |
| Gate-emitter leakage current | I G E S | VC E=0V,V GE=20V | 600 | nA |
| Transconductance | g f s | VC E=20V, I C=25A | 16 | S |
| Integrated gate resistor | R G i n t | 8 | ||
| Input capacitance | C i s s | 1860 | pF | |
| Output capacitance | C o s s | 96 | pF | |
| Reverse transfer capacitance | C r s s | VC E=25V, V G E=0V, f=1MHz | 82 | pF |
| Gate charge | Q Ga te | VC C=960V, I C=25A, V G E=15V | 155 | nC |
| Internal emitter inductance | L E | measured 5mm from case | 13 | nH |
| Short circuit collector current | I C (SC ) | V G E=15V,t SC10s, VC C = 600V, T j = 25C | 150 | A |
| Parameter | Symbol | Conditions | Tj=25C (typ.) | Tj=150C (typ.) | Unit |
| Turn-on delay time | t d (o n ) | Inductive Load | 50 | 50 | ns |
| Rise time | t r | Inductive Load | 30 | 32 | ns |
| Turn-off delay time | t d (o f f ) | Inductive Load | 560 | 660 | ns |
| Fall time | t f | Inductive Load | 70 | 130 | ns |
| Turn-on energy | Eo n | Inductive Load | 2.0 | 3.0 | mJ |
| Turn-off energy | Eo ff | Inductive Load | 2.2 | 4.0 | mJ |
| Total switching energy | E t s | Inductive Load | 4.2 | 7.0 | mJ |
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