SOT23 Package Silicon Variable Capacitance Diode Infineon BB804SF1E6327 with Common Cathode Configuration

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Product Description

Product Overview

The BB804 is a Silicon Variable Capacitance Diode designed for FM tuners. It features a monolithic chip with a common cathode for perfect tracking of both diodes, offering uniform "square law" characteristics. This diode is ideal for HiFi tuning devices when used in a low-distortion, back-to-back configuration. The BB804 is Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon Technologies
Type: Silicon Variable Capacitance Diode
Package: SOT23
Configuration: Common cathode
Compliance: Pb-free (ROHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Inductance (LS)	LS(nH)	1.8	nH
Marking		BB804		SF1/2/3* (*For differences see next page)
Diode reverse voltage	VR	18	V	Maximum Rating at TA = 25C
Peak reverse voltage	VRM	20	V	Maximum Rating at TA = 25C
Forward current	IF	50	mA	Maximum Rating at TA = 25C
Operating temperature range	Top	-55 ... 125	C	Maximum Rating
Storage temperature	Tstg	-55 ... 150	C	Maximum Rating
Reverse current (VR = 16 V)	IR	-	nA	max. at TA = 25C
Reverse current (VR = 16 V, TA = 65 C)	IR	-	nA	max. at TA = 65C
Diode capacitance (VR = 2 V, f = 1 MHz)	CT	42 - 47.5	pF	Electrical Characteristic
Capacitance ratio (VR = 2 V, VR = 8 V, f = 1 MHz)	CT2/CT8	1.65 - 1.71		Electrical Characteristic
Series resistance (VR = 2 V, f = 100 MHz)	rS	- 0.18		Electrical Characteristic
Figure of merit (f = 100 MHz, VR = 2 V)	Q	- 200	-	Electrical Characteristic
Temperature coefficient of diode capacitance (VR = 2 V, f = 1 MHz)	TCC	- 330	ppm/K	Electrical Characteristic