Silicon tuning diode Infineon BB535E7908 providing excellent matching and low series inductance for UHF TV tuners
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Negotiable
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Product Description
Product Overview
The BB535/BB555 series are silicon tuning diodes designed for UHF-TV tuners. They offer a high capacitance ratio, low series inductance, and low series resistance. An 'in-line' matching assembly procedure ensures excellent uniformity and matching between diodes. These components are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Certifications: Pb-free (RoHS compliant)
Technical Specifications
| Model | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|
| BB535 | SOD323 | single | 1.8 | white S |
| BB555 | SCD80 | single | 0.6 | B |
| BB555/-02V | SC79 | single | 0.6 | B |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Diode reverse voltage | VR | 30 | V | - |
| Peak reverse voltage | VRM | 35 | V | R 5k |
| Forward current | IF | 20 | mA | - |
| Operating temperature range | Top | -55 ... 150 | C | - |
| Storage temperature | Tstg | -55 ... 150 | C | - |
| Reverse current | IR | - | nA | VR = 30 V, TA = 85 C |
| Reverse current | IR | 10 | nA | VR = 30 V, TA = 25 C |
| Diode capacitance | CT | 17.5 | pF | VR = 1 V, f = 1 MHz |
| Diode capacitance | CT | 14.01 | pF | VR = 2 V, f = 1 MHz |
| Diode capacitance | CT | 2.05 | pF | VR = 25 V, f = 1 MHz |
| Diode capacitance | CT | 1.9 | pF | VR = 28 V, f = 1 MHz |
| Capacitance ratio | CT1/CT28 | 8.2 | - | VR = 1 V, VR = 28 V, f = 1 MHz |
| Capacitance ratio | CT1/CT28 | 8.9 | - | VR = 1 V, VR = 28 V, f = 1 MHz |
| Capacitance ratio | CT1/CT28 | 9.8 | - | VR = 1 V, VR = 28 V, f = 1 MHz |
| Capacitance ratio | CT2/CT25 | 6 | - | VR = 2 V, VR = 25 V, f = 1 MHz |
| Capacitance ratio | CT2/CT25 | 6.7 | - | VR = 2 V, VR = 25 V, f = 1 MHz |
| Capacitance ratio | CT2/CT25 | 7.5 | - | VR = 2 V, VR = 25 V, f = 1 MHz |
| Capacitance matching | CT/CT | 0.15 | % | VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB535 |
| Capacitance matching | CT/CT | 0.25 | % | VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB555/-02V |
| Capacitance matching | CT/CT | 2.5 | % | VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB555/-02V |
| Series resistance | rS | 0.58 | VR = 3 V, f = 470 MHz | |
| Series resistance | rS | 0.75 | VR = 3 V, f = 470 MHz | |
| Series inductance | LS | 0.6 | nH | - |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Normalized diode capacitance | CTA/C25C | 0.96 | - | f = 1MHz, VR = 1V |
| Normalized diode capacitance | CTA/C25C | 0.98 | - | f = 1MHz, VR = 2V |
| Normalized diode capacitance | CTA/C25C | 1 | - | f = 1MHz, VR = 25V |
| Normalized diode capacitance | CTA/C25C | 1.02 | - | f = 1MHz, VR = 28V |
| Normalized diode capacitance | CTA/C25C | 1.04 | - | f = 1MHz, VR = 30V |
| Temperature coefficient of the diode capacitance | TCC | -5 x 10-4 | 1/C | f = 1MHz |
| Temperature coefficient of the diode capacitance | TCC | -1 x 10-3 | 1/C | f = 1MHz |
| Reverse current | IR | 0 | pA | VR = 28 V, TA = -10 C |
| Reverse current | IR | 10 | pA | VR = 28 V, TA = 10 C |
| Reverse current | IR | 100 | pA | VR = 28 V, TA = 30 C |
| Reverse current | IR | 1000 | pA | VR = 28 V, TA = 50 C |
| Reverse current | IR | 10000 | pA | VR = 28 V, TA = 70 C |
| Reverse current | IR | 10 | pA | TA = 25C, VR = 10V |
| Reverse current | IR | 100 | pA | TA = 25C, VR = 100V |
| Reverse current | IR | 1000 | pA | TA = 25C, VR = 1000V |
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