Pb-free silicon tuning diode Infineon BBY55-02WH6327 designed for low voltage operation in VCO circuits

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BBY55 series are silicon hyperabrupt tuning diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These diodes offer excellent linearity, high Q, and low series resistance, along with a very low capacitance spread. They are Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Model	Type	Package	LS (nH)	Marking
BBY55-02V	single	SC79	0.6	77 white
BBY55-02W	single	SCD80	0.6	7
BBY55-03W	single	SOD323	1.8	7

Parameter	Symbol	Value	Unit	Condition
Diode reverse voltage	VR	16	V	TA = 25C
Forward current	IF	20	mA	TA = 25C
Operating temperature range	Top	-55 ... 150	C
Storage temperature	Tstg	-55 ... 150	C
Reverse current	IR	-	nA	VR = 15 V, TA = 25C
Reverse current	IR	-	100	nA	VR = 15 V, TA = 85C
Diode capacitance	CT	17.5 - 19.6	pF	VR = 1 V, f = 1 MHz
Diode capacitance	CT	14 - 16	pF	VR = 2 V, f = 1 MHz
Diode capacitance	CT	11.6 - 13.6	pF	VR = 3 V, f = 1 MHz
Diode capacitance	CT	10 - 12	pF	VR = 4 V, f = 1 MHz
Diode capacitance	CT	5.5 - 6.5	pF	VR = 10 V, f = 1 MHz
Capacitance ratio	CT2/CT10	2 - 3		VR = 2 V, VR = 10 V, f = 1 MHz
Series resistance	rS	- 0.4		VR = 5 V, f = 470 MHz
Series resistance	rS	- 0.15		VR = 5 V, f = 470 MHz