Industrial power control IGBT Infineon IHW15N120E1 resonant soft switching reverse conducting device

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Product Description

Product Overview

The IHW15N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT with a monolithic body diode, designed for soft commutation applications. It features TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, and easy parallel switching. This IGBT is Pb-free and RoHS compliant, suitable for industrial power control applications.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM
Certifications: JEDEC, RoHS compliant
Lead Plating: Pb-free

Technical Specifications

Type	VCE	IC	VCEsat, Tvj=25C	Tvjmax	Marking	Package
IHW15N120E1	1200V	15A	1.5V	150C	H15ME1	PG-TO247-3

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.50mA	1200	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 15.0A, Tvj = 25C	1.50	V
Diode forward voltage	VF	VGE = 0V, IF = 15.0A, Tvj = 25C	1.90	V
Gate-emitter threshold voltage	VGE(th)	IC = 0.50mA, VCE = VGE	4.0	V
Zero gate voltage collector current	ICES	VCE = 1200V, VGE = 0V, Tvj = 25C	300	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	100	nA
Transconductance	gfs	VCE = 20V, IC = 15.0A	14.0	S
Integrated gate resistor	rG		6.8
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	810	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	24	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	20	pF
Gate charge	QG	VCC = 960V, IC = 15.0A, VGE = 15V	90.0	nC
Internal emitter inductance	LE	measured 5mm from case	13.0	nH
Turn-off delay time	td(off)	Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2	130	ns
Fall time	tf	Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2	1000	ns
Turn-off energy, soft switching	Eoff	Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 50.0V/s	0.03	mJ
Turn-off delay time	td(off)	Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2	150	ns
Fall time	tf	Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2	790	ns
Turn-off energy, soft switching	Eoff	Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 150.0V/s	0.17	mJ
Turn-off delay time	td(off)	Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2	140	ns
Fall time	tf	Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2	1800	ns
Turn-off energy, soft switching	Eoff	Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 50.0V/s	0.07	mJ
Turn-off delay time	td(off)	Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2	150	ns
Fall time	tf	Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2	1300	ns
Turn-off energy, soft switching	Eoff	Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 150.0V/s	0.36	mJ

Parameter	Symbol	Conditions	Value	Unit
IGBT thermal resistance, junction - case	Rth(j-c)		0.80	K/W
Diode thermal resistance, junction - case	Rth(j-c)		0.80	K/W
Thermal resistance junction - ambient	Rth(j-a)		40	K/W
Power dissipation	Ptot	TC = 25C	156.0	W
Power dissipation	Ptot	TC = 100C	62.2	W
Operating junction temperature	Tvj		-40...+150	C
Storage temperature	Tstg		-55...+150	C
Soldering temperature, wave soldering 1.6mm from case for 10s			260	C
Mounting torque, M3 screw	M	Maximum of mounting processes	0.6	Nm