Mobile communication VCO tuning diode Infineon BBY53-05WE6327 with low reverse voltage silicon design

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Product Description

Product Overview

The BBY53 is a high Q hyperabrupt silicon tuning diode designed for low tuning voltage operation in VCOs for mobile communications equipment. It offers a high capacitance ratio at low reverse voltage and is available in a Pb-free (RoHS compliant) package.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Model	Package	Configuration	LS (nH)	Marking
BBY53	SOT23	common cathode	2	S7s
BBY53-02L	TSLP-2-1	single, leadless	0.4	LL
BBY53-02V	SC79	single	0.6	L
BBY53-02W	SCD80	single	0.6	LL
BBY53-03W	SOD323	single	1.8	white
BBY53-05W	SOT323	common cathode	1.4	5

Parameter	Symbol	Value	Unit
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage	VR	6	V
Forward current	IF	20	mA
Operating temperature range	Top	-55 ... 125	C
Storage temperature	Tstg	-55 ... 150	C
Electrical Characteristics at TA = 25C, unless otherwise specified
Reverse current (VR = 4 V)	IR	-	10 nA
Reverse current (VR = 4 V, TA = 85 C)	IR	-	200 nA
Diode capacitance (VR = 1 V, f = 1 MHz)	CT	4.8 - 5.8	pF
Diode capacitance (VR = 3 V, f = 1 MHz)	CT	1.85 - 3.1	pF
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz)	CT1/CT3	1.8 - 2.6	-
Series resistance (VR = 1 V, f = 1 GHz)	rS	- 0.47