Trench and Fieldstop IGBT Infineon IKW20N60T Power Semiconductor with Soft Fast Recovery EmCon HE Diode
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Product Description
Product Overview
The TrenchStop Series IKP20N60T, IKB20N60T, and IKW20N60T are low-loss DuoPack power semiconductors featuring IGBTs in Trench and Fieldstop technology with a soft, fast recovery EmCon HE diode. These devices offer very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. They are designed for applications such as frequency converters and uninterrupted power supplies. The Trench and Fieldstop technology provides very tight parameter distribution, high ruggedness, temperature-stable behavior, very high switching speed, and low VCE(sat). Key features include a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode.
Product Attributes
- Brand: Infineon
- Technology: Trench and Fieldstop
- Diode Type: EmCon HE
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking Code | Package | Ordering Code |
| IKP20N60T | 600V | 20A | 1.5V | 175C | K20T60 | TO-220 | Q67040S4715 |
| IKB20N60T | 600V | 20A | 1.5V | 175C | K20T60 | TO-263 | Q67040S4713 |
| IKW20N60T | 600V | 20A | 1.5V | 175C | K20T60 | TO-247 | Q67040S4716 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | V CE | 600 | V | |
| DC collector current, limited by Tjmax | I C | TC = 25C | 40 | A |
| DC collector current, limited by Tjmax | I C | TC = 100C | 20 | A |
| Pulsed collector current, tp limited by Tjmax | I C p u l s | 60 | A | |
| Diode forward current, limited by Tjmax | I F | TC = 25C | 40 | A |
| Diode forward current, limited by Tjmax | I F | TC = 100C | 20 | A |
| Diode pulsed current, tp limited by Tjmax | I Fp u l s | 60 | A | |
| Gate-emitter voltage | V G E | 20 | V | |
| Short circuit withstand time | t SC | VGE = 15V, VCC 400V, Tj 150C | 5 | s |
| Power dissipation | P to t | TC = 25C | 166 | W |
| Operating junction temperature | T j | -40...+175 | C | |
| Storage temperature | T st g | -55...+175 | C | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | 260 | C |
| Parameter | Symbol | Conditions | min. | Typ. | max. | Unit |
| Collector-emitter breakdown voltage | V (BR )C ES | V G E=0V, I C=0.2mA | 600 | - | - | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=20A, T j=25C | - | 1.5 | - | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=20A, T j=175C | - | 1.9 | 2.05 | V |
| Diode forward voltage | V F | V G E=0V, I F=20A, T j=25C | - | 1.65 | - | V |
| Diode forward voltage | V F | V G E=0V, I F=20A, T j=175C | - | 1.6 | 2.05 | V |
| Gate-emitter threshold voltage | V G E( th ) | I C=290A,VC E=V G E | 4.1 | 4.9 | 5.7 | V |
| Zero gate voltage collector current | I C ES | VC E=600V, V G E=0V, T j=25C | - | - | 40 | A |
| Zero gate voltage collector current | I C ES | VC E=600V, V G E=0V, T j=175C | - | - | 1000 | A |
| Gate-emitter leakage current | I G E S | VC E=0V,V GE=20V | - | - | 100 | nA |
| Transconductance | g f s | VC E=20V, I C=20A | - | 11 | - | S |
| Input capacitance | C i s s | VC E=25V, V G E=0V, f=1MHz | - | 1100 | - | pF |
| Output capacitance | C o s s | VC E=25V, V G E=0V, f=1MHz | - | 71 | - | pF |
| Reverse transfer capacitance | C r s s | VC E=25V, V G E=0V, f=1MHz | - | 32 | - | pF |
| Gate charge | Q Ga te | VC C=480V, I C=20A, V G E=15V | - | 120 | - | nC |
| Turn-on delay time | t d (o n ) | Inductive Load, Tj=25 C | - | 18 | - | ns |
| Rise time | t r | Inductive Load, Tj=25 C | - | 14 | - | ns |
| Turn-off delay time | t d (o f f ) | Inductive Load, Tj=25 C | - | 199 | - | ns |
| Fall time | t f | Inductive Load, Tj=25 C | - | 42 | - | ns |
| Turn-on energy | Eo n | Inductive Load, Tj=25 C | - | 0.31 | - | mJ |
| Turn-off energy | Eo ff | Inductive Load, Tj=25 C | - | 0.46 | - | mJ |
| Total switching energy | E t s | Inductive Load, Tj=25 C | - | 0.77 | - | mJ |
| Diode reverse recovery time | t rr | Inductive Load, Tj=25 C | - | 41 | - | ns |
| Diode reverse recovery charge | Q r r | Inductive Load, Tj=25 C | - | 0.31 | - | C |
| Diode peak reverse recovery current | I rr m | Inductive Load, Tj=25 C | - | 13.3 | - | A |
| Diode peak rate of fall of reverse recovery current | dir r/dt | Inductive Load, Tj=25 C | - | 711 | - | A/s |
| Turn-on delay time | t d (o n ) | Inductive Load, Tj=175 C | - | 18 | - | ns |
| Rise time | t r | Inductive Load, Tj=175 C | - | 18 | - | ns |
| Turn-off delay time | t d (o f f ) | Inductive Load, Tj=175 C | - | 223 | - | ns |
| Fall time | t f | Inductive Load, Tj=175 C | - | 76 | - | ns |
| Turn-on energy | Eo n | Inductive Load, Tj=175 C | - | 0.51 | - | mJ |
| Turn-off energy | Eo ff | Inductive Load, Tj=175 C | - | 0.64 | - | mJ |
| Total switching energy | E t s | Inductive Load, Tj=175 C | - | 1.15 | - | mJ |
| Diode reverse recovery time | t rr | Inductive Load, Tj=175 C | - | 176 | - | ns |
| Diode reverse recovery charge | Q r r | Inductive Load, Tj=175 C | - | 1.46 | - | C |
| Diode peak reverse recovery current | I rr m | Inductive Load, Tj=175 C | - | 18.9 | - | A |
| Diode peak rate of fall of reverse recovery current | dir r/dt | Inductive Load, Tj=175 C | - | 467 | - | A/s |
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