1200 Volt TRENCHSTOP IGBT 7 Technology Device Featuring Infineon IKZA75N120CH7XKSA1 for Industrial
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Product Description
Product Overview
The IKZA75N120CH7 is a high-speed 1200 V TRENCHSTOP IGBT 7 Technology device, co-packed with a full-rated current, soft-commutating, ultra-fast recovery, and low Qrr emitter-controlled 7 Rapid diode. It is optimized for high efficiency in high-speed hard switching topologies and offers easy paralleling capability due to its positive temperature coefficient in VCEsat. This product is qualified for industrial applications.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP IGBT 7
- Certifications: Pb-free lead plating; RoHS compliant
- PSpice Models: http://www.infineon.com/igbt/
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
|---|---|---|---|---|
| IGBT Characteristics | ||||
| Collector-emitter voltage | VCE | Tvj 25 C | 1200 | V |
| DC collector current | IC | limited by bondwire, Tc = 25 C | 109 | A |
| DC collector current | IC | limited by bondwire, Tc = 100 C | 94 | A |
| Pulsed collector current | ICpulse | limited by Tvjmax | 300 | A |
| Gate-emitter voltage | VGE | 20 | V | |
| Collector-emitter saturation voltage | VCEsat | IC = 75 A, VGE = 15 V, Tvj = 25 C | 1.7 / 2.15 | V |
| Collector-emitter saturation voltage | VCEsat | IC = 75 A, VGE = 15 V, Tvj = 175 C | 2 | V |
| Gate-emitter threshold voltage | VGEth | IC = 1.2 mA, VCE = VGE | 4.7 / 5.5 / 6.2 | V |
| Zero gate-voltage collector current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 40 | A |
| Zero gate-voltage collector current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 175 C | 4600 | A |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V | 100 | nA |
| Transconductance | gfs | IC = 75 A, VCE = 20 V | 193 | S |
| Input capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 100 kHz | 9.6 | nF |
| Output capacitance | Coes | VCE = 25 V, VGE = 0 V, f = 100 kHz | 184 | pF |
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE = 0 V, f = 100 kHz | 54 | pF |
| Gate charge | QG | VCC = 960 V, IC = 75 A, VGE = 15 V | 550 | nC |
| Turn-on delay time | td(on) | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 40 | ns |
| Turn-on delay time | td(on) | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 37 | ns |
| Rise time | tr | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 15 | ns |
| Rise time | tr | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 18 | ns |
| Turn-off delay time | td(off) | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 359 | ns |
| Turn-off delay time | td(off) | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 435 | ns |
| Fall time | tf | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 38 | ns |
| Fall time | tf | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 122 | ns |
| Turn-on energy | Eon | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 2.01 | mJ |
| Turn-on energy | Eon | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 3.16 | mJ |
| Turn-off energy | Eoff | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 1.76 | mJ |
| Turn-off energy | Eoff | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 4.04 | mJ |
| Total switching energy | Ets | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 25 C, IC = 75 A | 3.77 | mJ |
| Total switching energy | Ets | VCC = 600 V, VGE = 0/15 V, RG = 5.3 , Tvj = 175 C, IC = 75 A | 7.2 | mJ |
| Operating junction temperature | Tvj | -40 / 175 | C | |
| Diode Characteristics | ||||
| Diode forward current | IF | limited by bondwire, Tc = 25 C | 96 | A |
| Diode forward current | IF | limited by bondwire, Tc = 97 C | 75 | A |
| Diode pulsed current | IFpulse | limited by Tvjmax | 300 | A |
| Diode forward voltage | VF | IF = 75 A, Tvj = 25 C | 2.5 / 3 | V |
| Diode forward voltage | VF | IF = 75 A, Tvj = 175 C | 2.3 | V |
| Diode reverse recovery time | trr | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 25 C | 95 | ns |
| Diode reverse recovery time | trr | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 175 C | 180 | ns |
| Diode reverse recovery charge | Qrr | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 25 C | 2.44 | C |
| Diode reverse recovery charge | Qrr | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 175 C | 7.43 | C |
| Diode peak reverse recovery current | Irrm | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 25 C | 82 | A |
| Diode peak reverse recovery current | Irrm | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 175 C | 135 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 25 C | -2370 | A/s |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 150 C | -3300 | A/s |
| Reverse recovery energy | Erec | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 25 C | 0.82 | mJ |
| Reverse recovery energy | Erec | VR = 600 V, RG = 5.3 , IF = 75 A, Tvj = 175 C | 2.93 | mJ |
| Operating junction temperature | Tvj | -40 / 175 | C | |
| Package & Thermal Characteristics | ||||
| Internal emitter inductance | LE | measured 5 mm from case | 13 | nH |
| Storage temperature | Tstg | -55 / 150 | C | |
| Soldering temperature | Tsold | wave soldering 1.6 mm from case for 10 s | 260 | C |
| Mounting torque | M | M3 screw | 0.6 | Nm |
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | |
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.21 / 0.27 | K/W | |
| Diode thermal resistance, junction-case | Rth(j-c) | 0.36 / 0.47 | K/W | |
Potential Applications: Industrial UPS, EV-Charging, String inverter, Welding
Product Type: IKZA75N120CH7
Package: PG-TO247-4-STD-NT3.7
Marking: K75MCH7
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