Durable Infineon IKW75N65EH5 IGBT module with 650 volt rating and 75 amp collector current capability

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Product Description

Product Overview

The IKW75N65EH5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, and serves as a plug-and-play replacement for previous generation IGBTs. This device is copacked with a full-rated RAPID 1 fast and soft antiparallel diode, making it suitable for demanding applications.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM 5
Diode Type: RAPID 1 fast and soft antiparallel diode
Lead Plating: Pb-free
RoHS Compliant: Yes
Certifications: Qualified according to JEDEC for target applications

Technical Specifications

Type	VCE (V)	IC (A)	VCEsat, Tvj=25C (V)	Tvjmax (C)	Marking	Package
IKW75N65EH5	650	75.0 (TC=100C) / 90.0 (TC=25C)	1.65	175	K75EEH5	PG-TO247-3

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.20mA	650	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 75.0A, Tvj = 25C	1.65	V
Diode forward voltage	VF	VGE = 0V, IF = 75.0A, Tvj = 25C	1.35	V
Gate-emitter threshold voltage	VGE(th)	IC = 0.75mA, VCE = VGE	3.2 - 4.8	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	1	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	- 100	nA
Transconductance	gfs	VCE = 20V, IC = 75.0A	104.0	S
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	4200	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	130	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	17	pF
Gate charge	QG	VCC = 520V, IC = 75.0A, VGE = 15V	160.0	nC
Internal emitter inductance	LE	measured 5mm from case	13.0	nH

Parameter	Symbol	Conditions	Value	Unit
Turn-on delay time	td(on)	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	28	ns
Rise time	tr	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	33	ns
Turn-off delay time	td(off)	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	174	ns
Fall time	tf	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	41	ns
Turn-on energy	Eon	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	2.30	mJ
Turn-off energy	Eoff	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	0.90	mJ
Total switching energy	Ets	Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF	3.20	mJ
Diode reverse recovery time	trr	Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF	92	ns
Diode reverse recovery charge	Qrr	Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF	1.33	C
Diode peak reverse recovery current	Irrm	Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF	20.5	A