EconoDUAL3 IGBT Module Infineon FF225R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled HE Diode
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
FF225R12ME4 IGBT Module
The FF225R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. This module is suitable for applications such as motor drives, servo drives, UPS systems, and wind turbines.
Product Attributes
- Brand: EconoDUAL3
- Certifications: UL approved (E83335)
Technical Specifications
| Parameter | Value | Unit | Notes |
| IGBT, Inverter | |||
| Collector-emitter voltage | 1200 | V | VCES, Tvj = 25C |
| Continuous DC collector current | 225 | A | IC nom, TC = 95C, Tvj max = 175C |
| Continuous DC collector current | 320 | A | IC, TC = 25C, Tvj max = 175C |
| Repetitive peak collector current | 450 | A | ICRM, tP = 1 ms |
| Total power dissipation | 1050 | W | Ptot, TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | +/-20 | V | VGES |
| Collector-emitter saturation voltage | 1.85 - 2.15 | V | IC = 225 A, VGE = 15 V, Tvj = 25C - 150C |
| Gate threshold voltage | 5.2 - 6.4 | V | IC = 7.80 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 1.55 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | 3.3 | Tvj = 25C | |
| Input capacitance | 13.0 | nF | Cies, f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 0.705 | nF | Cres, f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 3.0 | mA | ICES, VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 400 | nA | IGES, VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | 0.16 - 0.18 | s | td on, IC = 225 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C - 150C |
| Rise time | 0.04 | s | tr, IC = 225 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C - 150C |
| Turn-off delay time | 0.38 - 0.50 | s | td off, IC = 225 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C - 150C |
| Fall time | 0.07 - 0.10 | s | tf, IC = 225 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C - 150C |
| Turn-on energy loss per pulse | 6.80 - 15.0 | mJ | Eon, IC = 225 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, Tvj = 25C - 150C |
| Turn-off energy loss per pulse | 17.0 - 29.5 | mJ | Eoff, IC = 225 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, Tvj = 25C - 150C |
| Short circuit capability | 900 | A | ISC, VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case | 0.14 | K/W | RthJC, per IGBT |
| Thermal resistance, case to heatsink | 0.031 | K/W | RthCH, per IGBT, Paste = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | Tvj op |
| Diode, Inverter | |||
| Repetitive peak reverse voltage | 1200 | V | VRRM, Tvj = 25C |
| Continuous DC forward current | 225 | A | IF |
| Repetitive peak forward current | 450 | A | IFRM, tP = 1 ms |
| It value | 10000 - 8100 | As | VR = 0 V, tP = 10 ms, Tvj = 125C - 150C |
| Forward voltage | 1.65 - 2.10 | V | VF, IF = 225 A, VGE = 0 V, Tvj = 25C - 150C |
| Peak reverse recovery current | 300 - 340 | A | IRM, IF = 225 A, -diF/dt = 5750 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Recovered charge | 22.5 - 49.5 | C | Qr, IF = 225 A, -diF/dt = 5750 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Reverse recovery energy | 12.0 - 25.0 | mJ | Erec, IF = 225 A, -diF/dt = 5750 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Thermal resistance, junction to case | 0.19 | K/W | RthJC, per diode |
| Thermal resistance, case to heatsink | 0.042 | K/W | RthCH, per diode, Paste = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | Tvj op |
| NTC Thermistor | |||
| Rated resistance | 5.00 | k | R25, TC = 25C |
| Deviation of R100 | -5 - 5 | % | R/R, TC = 100C, R100 = 493 |
| Power dissipation | 20.0 | mW | P25, TC = 25C |
| B-Value | 3375 - 3433 | K | B25/50 - B25/100 |
| Module | |||
| Isolation test voltage | 2.5 | kV | VISOL, RMS, f = 50 Hz, t = 1 min |
| Material of module baseplate | Cu | ||
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | |
| Creepage distance | 14.5 - 13.0 | mm | Terminal to heatsink / terminal to terminal |
| Clearance | 12.5 - 10.0 | mm | Terminal to heatsink / terminal to terminal |
| Comperative tracking index | > 200 | CTI | |
| Thermal resistance, case to heatsink | 0.009 | K/W | RthCH, per module, Paste = 1 W/(mK) |
| Stray inductance module | 20 | nH | LsCE |
| Module lead resistance, terminals - chip | 1.30 | m | RCC'+EE', TC = 25C, per switch |
| Storage temperature | -40 - 125 | C | Tstg |
| Mounting torque for module mounting | 3.00 - 6.00 | Nm | Screw M5 |
| Terminal connection torque | 3.0 - 6.0 | Nm | Screw M6 |
| Weight | 345 | g | G |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina