High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems
Product Overview
The Infineon CoolSiC IJW120R070T1 is a 1200 V Silicon Carbide (SiC) JFET Power Transistor designed for high-efficiency power management applications. Leveraging the superior material properties of silicon carbide with a normally-on JFET concept, this transistor offers ultra-fast switching, low intrinsic capacitance, and low gate charge, enabling higher system efficiency, increased power density, and reduced cooling requirements. Its robust design and high operating temperature capability (up to 175 C) contribute to enhanced system reliability. Ideal for solar inverters, high voltage DC/DC or AC/DC conversion, and bidirectional inverters, it is compliant with climate class IEC 60721-3-4 (4K4H).
Product Attributes
- Brand: Infineon CoolSiC
- Material: Silicon Carbide (SiC)
- Technology: JFET (Junction Field Effect Transistor)
- Certifications: Compliant for applications according to climate class IEC 60721-3-4 (4K4H)
Technical Specifications
| Parameter | Symbol | Value | Unit | Note/Test Condition |
|---|---|---|---|---|
| Drain Source Voltage | VDS | 1200 | V | |
| Drain Source On-State Resistance (max) | RDS(on) max | 70 | m | VGS= 0 V; TC= 25 C |
| Gate Charge (typ) | QG, typ | 92 | nC | |
| Pulsed Current, Drain Source (max) | ID, pulse | 114 | A | VGS= 0 V; TC= 25 C |
| Stored Energy in Coss @ 800 V (typ) | Eoss @ 800 V | 38 | J | |
| Maximum Operating Temperature | Tj, max | 175 | C | |
| Type / Ordering Code | IJW120R070T1 | |||
| Package | PG-TO247-3 | |||
| Marking | 120R070T1 | |||
| Breakdown voltage, drain source | V(BR)DSS | 1200 | V | VGS= -19.5 V; IDS= 1 mA; TC= -50 C |
| Gate threshold voltage (typ) | VGS(th) | -12.3 to -13.9 | V | IDS= 14 A; VDS= 40 V; Tj= 100 C (bin dependent) |
| Drain- source leakage current (typ) | IDSS | 6.6 | A | VDS= 1200 V; VGS= -19.5 V; TC= 100 C |
| Drain- source on- state resistance (typ) | RDS(on) | 0.055 | VGS= 0 V; IDS=12.5 A; TC= 25 C | |
| Input capacitance (typ) | Ciss | 1600 | pF | VGS= -19.5 V; VDS= 800 V; f= 1 MHz |
| Output capacitance (typ) | Coss | 102 | pF | VGS= -19.5 V; VDS= 800 V; f= 1 MHz |
| Turn- on delay time (typ) | td(on) | 51 | ns | VDS= 800 V; VGS= -19.5 V/ 0 V; ID= 26 A; TC= 25 C; RG(on),tot= 2 |
| Gate charge, total (typ) | QG | 92 | nC | |
| Diode forward voltage (typ) | VSD | 8 | V | ISD = 25 A; VGS= -19.5 V; TC = 100 C |
| Reverse recovery time (typ) | trr | 14 | ns | ISD = 25 A, VDS = 800 V, RG= 0 , Tj = 25 C |
| Reverse recovery charge (typ) | Qrr | 120 | nC |
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