High speed switching Infineon IKA08N65F5 IGBT with soft antiparallel diode and RoHS compliant design
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Product Description
Product Overview
The IKA08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low QG. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. The device is suitable for applications requiring high-speed switching.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IKA08N65F5 | 650V | 8A | 1.6V | 175C | K08EEF5 | PG-TO220-3 FP |
Maximum Ratings
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-emitter voltage | VCE | 650 | V | DC |
| DC collector current, limited by Tvjmax | IC | 10.8 / 6.8 | A | TC = 25C / 100C |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 24.0 | A | |
| Turn off safe operating area | - 24.0 | A | VCE 650V, Tvj 175C | |
| Diode forward current, limited by Tvjmax | IF | 12.3 / 7.3 | A | TC = 25C / 100C |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 24.0 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage (tp 10s, D | 30 | V | ||
| Power dissipation | Ptot | 31.2 / 15.6 | W | TC = 25C / 100C |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||
| Mounting torque, M3 screw | 0.6 | Nm | Maximum of mounting processes |
Thermal Resistance
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | 4.80 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 5.60 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 65 | K/W |
Electrical Characteristics
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
| Static Characteristic | ||||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A, Tvj = 25C | - | - | 1.60 | V |
| VGE = 15.0V, IC = 8.0A, Tvj = 125C | - | - | 1.80 | |||
| VGE = 15.0V, IC = 8.0A, Tvj = 175C | - | - | 2.10 | |||
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A, Tvj = 25C | - | - | 1.45 | V |
| VGE = 0V, IF = 9.0A, Tvj = 125C | - | - | 1.40 | |||
| VGE = 0V, IF = 9.0A, Tvj = 175C | - | - | 1.40 | |||
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - | - | 40.0 | A |
| VCE = 650V, VGE = 0V, Tvj = 175C | - | - | 4000.0 | |||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | - | 17.0 | - | S |
| Dynamic Characteristic | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 500 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 16 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 3 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | - | 22.0 | - | nC |
| Switching Characteristic, Inductive Load | ||||||
| IGBT Characteristic, at Tvj = 25C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 10 | - | ns |
| Rise time | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 5 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 116 | - | ns |
| Fall time | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 20 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.07 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.09 | - | mJ |
| IGBT Characteristic, at Tvj = 25C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 9 | - | ns |
| Rise time | tr | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 3 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 129 | - | ns |
| Fall time | tf | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 35 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.04 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.06 | - | mJ |
| Diode Characteristic, at Tvj = 25C | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 41 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.14 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 6.6 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -160 | - | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 27 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 0.10 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 6.2 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | -300 | - | A/s |
| IGBT Characteristic, at Tvj = 150C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 9 | - | ns |
| Rise time | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 6 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 145 | - | ns |
| Fall time | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 18 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.10 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.03 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.13 | - | mJ |
| IGBT Characteristic, at Tvj = 150C | ||||||
| Turn-on delay time | td(on) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 9 | - | ns |
| Rise time | tr | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 4 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 165 | - | ns |
| Fall time | tf | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 25 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.06 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF | - | 0.08 | - | mJ |
| Diode Characteristic, at Tvj = 150C | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 56 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.27 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 7.5 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -134 | - | A/s |
| Diode reverse recovery time | trr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 42 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 0.19 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 7.4 | - | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | -240 | - | A/s |
Applications
- Solar converters
- Uninterruptible power supplies
- Welding converters
- Mid to high range switching frequency converters
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