Industrial EasyPACK power module Infineon FS100R12W2T7B11 with emitter controlled diode and NTC sensor

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Price: Negotiable

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Product Description

Product Overview

The EasyPACK module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and PressFIT/NTC offers high power density and compact design. It features TRENCHSTOPIGBT7 technology for low VCE,sat and overload operation up to 175C. The PressFIT contact technology ensures efficient mechanical integration. This module is qualified for industrial applications.

Product Attributes

Brand: Infineon
Product Line: EasyPACK
Technology: TRENCHSTOP IGBT7, emitter controlled 7 diode, PressFIT, NTC
Substrate Material: Al2O3
Insulation: 2.5 kV AC 1 minute

Technical Specifications

Parameter	Symbol	Note or test condition	Values	Unit
General
Collector-emitter voltage	VCES	Tvj = 25 C	1200	V
Implemented collector current	ICN		100	A
Continuous DC collector current	ICDC	Tvj max = 175 C, TH = 65 C	80	A
Repetitive peak collector current	ICRM	tp limited by Tvj op	200	A
Gate-emitter peak voltage	VGES		±20	V
Repetitive peak reverse voltage	VRRM	Tvj = 25 C	1200	V
Continuous DC forward current	IF		100	A
Repetitive peak forward current	IFRM	tP = 1 ms	200	A
IGBT, Inverter
Collector-emitter saturation voltage	VCE sat	IC = 100 A, VGE = 15 V, Tvj = 25 C	1.50 - 1.80	V
Collector-emitter saturation voltage	VCE sat	IC = 100 A, VGE = 15 V, Tvj = 125 C	1.64	V
Collector-emitter saturation voltage	VCE sat	IC = 100 A, VGE = 15 V, Tvj = 175 C	1.72	V
Gate threshold voltage	VGEth	IC = 2.5 mA, VCE = VGE, Tvj = 25 C	5.15 - 6.45	V
Gate charge	QG	VGE = ±15 V, VCC = 600 V	1.8	µC
Internal gate resistor	RGint	Tvj = 25 C	1.5	Ω
Input capacitance	Cies	f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V	21.7	nF
Reverse transfer capacitance	Cres	f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V	0.075	nF
Collector-emitter cut-off current	ICES	VCE = 1200 V, VGE = 0 V, Tvj = 25 C	0.009	mA
Gate-emitter leakage current	IGES	VCE = 0 V, VGE = 20 V, Tvj = 25 C	100	nA
Turn-on delay time (inductive load)	tdon	IC = 100 A, VCC = 600 V, VGE = ±15 V, RGon = 1.8 Ω	0.150 - 0.174	µs
Rise time (inductive load)	tr	IC = 100 A, VCC = 600 V, VGE = ±15 V, RGon = 1.8 Ω	0.041 - 0.047	µs
Turn-off delay time (inductive load)	tdoff	IC = 100 A, VCC = 600 V, VGE = ±15 V, RGoff = 1.8 Ω	0.300 - 0.420	µs
Fall time (inductive load)	tf	IC = 100 A, VCC = 600 V, VGE = ±15 V, RGoff = 1.8 Ω	0.100 - 0.250	µs
Turn-on energy loss per pulse	Eon	IC = 100 A, VCC = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 1.8 Ω, di/dt = 1700 A/µs	6 - 10.1	mJ
Turn-off energy loss per pulse	Eoff	IC = 100 A, VCC = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 1.8 Ω, dv/dt = 2850 V/µs	6 - 12	mJ
SC data	ISC	VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt, tP ≤ 8 µs	350 - 370	A
Thermal resistance, junction to heat sink	RthJH	per IGBT, λgrease = 1 W/(m·K)	0.700	K/W
Temperature under switching conditions	Tvj op		-40 - 175	°C
Diode, Inverter
I2t - value	I2t	tP = 10 ms, VR = 0 V	860 - 970	A²s
Forward voltage	VF	IF = 100 A, VGE = 0 V, Tvj = 25 °C	1.72 - 2.10	V
Forward voltage	VF	IF = 100 A, VGE = 0 V, Tvj = 125 °C	1.59	V
Forward voltage	VF	IF = 100 A, VGE = 0 V, Tvj = 175 °C	1.52	V
Peak reverse recovery current	IRM	VCC = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1700 A/µs	60 - 91	A
Recovered charge	Qr	VCC = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1700 A/µs	7.1 - 17.3	µC
Reverse recovery energy	Erec	VCC = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1700 A/µs	2.4 - 5.6	mJ
Thermal resistance, junction to heat sink	RthJH	per diode, λgrease = 1 W/(m·K)	0.966	K/W
Temperature under switching conditions	Tvj op		-40 - 175	°C
NTC-Thermistor
Rated resistance	R25	TNTC = 25 °C	5	kΩ
Deviation of R100	ΔR/R	TNTC = 100 °C, R100 = 493 Ω	-5 - 5	%
Power dissipation	P25	TNTC = 25 °C	20	mW
B-value	B25/50	R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]	3375	K
B-value	B25/80	R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]	3411	K
B-value	B25/100	R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]	3433	K
Package
Isolation test voltage	VISOL	RMS, f = 50 Hz, t = 1 min	2.5	kV
Creepage distance	dCreep	terminal to heatsink	11.5	mm
Creepage distance	dCreep	terminal to terminal	6.3	mm
Clearance	dClear	terminal to heatsink	10.0	mm
Clearance	dClear	terminal to terminal	5.0	mm
Comparative tracking index	CTI		> 200
Relative thermal index (electrical)	RTI housing		140	°C
Stray inductance module	LsCE		20	nH
Module lead resistance, terminals	RCC'+EE'	TH = 25 °C, per switch	4	mΩ
Storage temperature	Tstg		-40 - 125	°C
Mounting force per clamp	F		40 - 80	N
Weight	G		39	g