China EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage for sale

EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The FS75R12KT4_B15 is an EconoPACK2 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers low VCEsat, high thermal cycling capability, and an integrated NTC temperature sensor, making it suitable for applications such as auxiliary inverters, motor drives, and servo drives.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Al2O3 Substrate, Copper Base Plate
Certifications: UL approved (E83335)

Technical Specifications

Parameter	Value	Unit	Notes
IGBT, Inverter - Maximum Rated Values
Collector-emitter voltage	1200	V	Tvj = 25C
Continuous DC collector current	75	A	TC = 95C, Tvj max = 175C
Repetitive peak collector current	150	A	tP = 1 ms
Total power dissipation	385	W	TC = 25C, Tvj max = 175C
Gate-emitter peak voltage	+/-20	V
IGBT, Inverter - Characteristic Values
Collector-emitter saturation voltage	1.85 - 2.25	V	IC = 75 A, VGE = 15 V, Tvj = 25C - 150C
Gate threshold voltage	5.2 - 6.4	V	IC = 2,40 mA, VCE = VGE, Tvj = 25C
Gate charge	0.57	C	VGE = -15 V ... +15 V
Internal gate resistor	10		Tvj = 25C
Input capacitance	4.30	nF	f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance	0.16	nF	f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current	1.0	mA	VCE = 1200 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current	100	nA	VCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time	0.13 - 0.15	s	IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2,2 , Tvj = 25C - 150C
Rise time	0.02 - 0.035	s	IC = 75 A, VCE = 600 V, VGE = 15 V, RGon = 2,2 , Tvj = 25C - 150C
Turn-off delay time	0.30 - 0.40	s	IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2,2 , Tvj = 25C - 150C
Fall time	0.045 - 0.09	s	IC = 75 A, VCE = 600 V, VGE = 15 V, RGoff = 2,2 , Tvj = 25C - 150C
Turn-on energy loss per pulse	4.70 - 8.00	mJ	IC = 75 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, di/dt = 2800 A/s, RGon = 2,2 , Tvj = 25C - 150C
Turn-off energy loss per pulse	3.90 - 6.40	mJ	IC = 75 A, VCE = 600 V, LS = 25 nH, VGE = 15 V, du/dt = 3800 V/s, RGoff = 2,2 , Tvj = 25C - 150C
Short circuit capability	270	A	VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s
Thermal resistance, junction to case (per IGBT)	0.39	K/W
Thermal resistance, case to heatsink (per IGBT)	0.195	K/W	Paste = 1 W/(mK) / grease = 1 W/(mK)
Operating temperature	-40 - 150	C	Tvj op
Diode, Inverter - Maximum Rated Values
Repetitive peak reverse voltage	1200	V	Tvj = 25C
Continuous DC forward current	75	A
Repetitive peak forward current	150	A	tP = 1 ms
It - value	960	As	VR = 0 V, tP = 10 ms, Tvj = 125C
Diode, Inverter - Characteristic Values
Forward voltage	1.65 - 2.15	V	IF = 75 A, VGE = 0 V, Tvj = 25C - 150C
Peak reverse recovery current	115 - 125	A	IF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Recovered charge	8.60 - 16.0	C	IF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Reverse recovery energy	2.60 - 5.50	mJ	IF = 75 A, - diF/dt = 2800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Thermal resistance, junction to case (per diode)	0.62	K/W
Thermal resistance, case to heatsink (per diode)	0.31	K/W	Paste = 1 W/(mK) / grease = 1 W/(mK)
Operating temperature	-40 - 150	C	Tvj op
NTC Thermistor - Characteristic Values
Rated resistance	5.00	k	TC = 25C
Deviation of R100	-5 - 5	%	TC = 100C, R100 = 493
Power dissipation	20.0	mW	TC = 25C
B-Value (B25/50)	3375	K
B-Value (B25/80)	3411	K
B-Value (B25/100)	3433	K
Module - General Specifications
Isolation test voltage	2.5	kV	RMS, f = 50 Hz, t = 1 min.
Material of module baseplate	Cu
Internal isolation	Al2O3		Basic insulation (class 1, IEC 61140)
Creepage distance (terminal to heatsink)	10.0	mm
Creepage distance (terminal to terminal)	10.0	mm
Clearance (terminal to heatsink)	7.5	mm
Clearance (terminal to terminal)	7.5	mm
Comparative tracking index	> 200
Thermal resistance, case to heatsink (per module)	0.02	K/W	Paste = 1 W/(mK) / grease = 1 W/(mK)
Stray inductance module	19	nH	LsCE
Module lead resistance (terminals - chip, per switch)	1.80	m	TC = 25C
Storage temperature	-40 - 125	C	Tstg
Mounting torque for module mounting (Screw M5)	3.00 - 6.00	Nm	Mounting according to valid application note
Weight	180	g	G