Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics
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Product Description
Product Overview
The IGW08T120 is a Low Loss IGBT from Infineon's TrenchStop Series, utilizing TrenchStop and Fieldstop technology for 1200V applications. It offers short circuit withstand time of 10s and is designed for frequency converters and uninterrupted power supplies. Key advantages include very tight parameter distribution, high ruggedness, temperature-stable behavior, easy parallel switching capability due to positive temperature coefficient in VCE(sat), low EMI, and low gate charge. This product is qualified according to JEDEC standards, Pb-free, and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TrenchStop
- Technology: TrenchStop and Fieldstop, NPT
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | IC (TC=100C) | VCE(sat) (Tj=25C) | Tj,max | Marking Code | Package |
| IGW08T120 | 1200V | 16A | 8A | 1.7V | 150C | G08T120 | PG-TO-247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | V CE | 1200 | V | |
| DC collector current | I C | TC = 25C | 16 | A |
| DC collector current | I C | TC = 100C | 8 | A |
| Pulsed collector current, tp limited by Tjmax | I C p u l s | 24 | A | |
| Gate-emitter voltage | V G E | 20 | V | |
| Short circuit withstand time | t SC | VGE = 15V, VCC 1200V, Tj 150C | 10 | s |
| Power dissipation | P to t | TC = 25C | 70 | W |
| Operating junction temperature | T j | -40...+150 | C | |
| Storage temperature | T st g | -55...+150 | C | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | 260 | C | ||
| IGBT thermal resistance, junction case | R t h JC | 1.7 | K/W | |
| IGBT thermal resistance, junction ambient | R t h JA | 40 | K/W | |
| Collector-emitter breakdown voltage | V (BR )C ES | V G E=0V, I C=0.5mA | 1200 | - |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=8A, T j=25C | 1.7 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=8A, T j=125C | 2.0 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=8A, T j=150C | 2.2 | V |
| Gate-emitter threshold voltage | V G E( th ) | I C=0.3mA,VC E=VG E | 5.0 / 5.8 / 6.5 | V |
| Zero gate voltage collector current | I C ES | VC E=1200V, V G E=0V, T j=25C | 0.2 | mA |
| Zero gate voltage collector current | I C ES | VC E=1200V, V G E=0V, T j=150C | 2.0 | mA |
| Gate-emitter leakage current | I G E S | VC E=0V,V GE=20V | 100 | nA |
| Transconductance | g f s | VC E=20V, I C=8A | 5 | S |
| Integrated gate resistor | R G i n t | none | ||
| Input capacitance | C i s s | 600 | pF | |
| Output capacitance | C o s s | 36 | pF | |
| Reverse transfer capacitance | C r s s | VC E=25V, V G E=0V, f=1MHz | 28 | pF |
| Gate charge | Q Ga te | VC C=960V, I C=8A, V G E=15V | 53 | nC |
| Internal emitter inductance measured 5mm (0.197 in.) from case | L E | 13 | nH | |
| Short circuit collector current | I C (SC ) | V G E=15V,t SC10s, VC C = 600V, T j = 25C | 48 | A |
| Turn-on delay time | t d (o n ) | Inductive Load, Tj=25 C | 40 | ns |
| Rise time | t r | Inductive Load, Tj=25 C | 23 | ns |
| Turn-off delay time | t d (o f f ) | Inductive Load, Tj=25 C | 450 | ns |
| Fall time | t f | Inductive Load, Tj=25 C | 70 | ns |
| Turn-on energy | Eo n | Inductive Load, Tj=25 C | 0.67 | mJ |
| Turn-off energy | Eo ff | Inductive Load, Tj=25 C | 0.7 | mJ |
| Total switching energy | E t s | Inductive Load, Tj=25 C | 1.37 | mJ |
| Turn-on delay time | t d (o n ) | Inductive Load, Tj=150 C | 40 | ns |
| Rise time | t r | Inductive Load, Tj=150 C | 26 | ns |
| Turn-off delay time | t d (o f f ) | Inductive Load, Tj=150 C | 570 | ns |
| Fall time | t f | Inductive Load, Tj=150 C | 140 | ns |
| Turn-on energy | Eo n | Inductive Load, Tj=150 C | 1.08 | mJ |
| Turn-off energy | Eo ff | Inductive Load, Tj=150 C | 1.2 | mJ |
| Total switching energy | E t s | Inductive Load, Tj=150 C | 2.28 | mJ |
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