Infineon F3L150R07W2E3 B11 IGBT module featuring low VCEsat and low inductive design for power conversion

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Product Description

Product Overview

The F3L150R07W2E3_B11 is an EasyPACK IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode with PressFIT and NTC. It offers increased blocking voltage capability to 650V, low inductive design, low switching losses, and low VCEsat. Its applications include 3-Level, Solar, and UPS systems. The module utilizes an Al2O3 substrate with low thermal resistance and a compact design with PressFIT connection technology and integrated mounting clamps for robust mounting.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Al2O3 Substrate
Color: Not specified
Certifications: UL approved (E83335)

Technical Specifications

Component	Parameter	Value	Unit	Conditions
IGBT, Inverter	VCES	650	V	Tvj = 25C
	IC nom	150	A	TC = 25C, Tvj max = 175C
	ICRM	300	A	tP = 1 ms
	Ptot	335	W	TC = 25C, Tvj max = 175C
	VGES	+/-20	V
	VCEsat	1.45 - 1.90	V	IC = 150 A, VGE = 15 V
	VGEth	4.9 - 6.5	V	IC = 2,40 mA, VCE = VGE, Tvj = 25C
	QG	1.60	C	VGE = -15 V ... +15 V
Diode, Inverter	VRRM	650	V	Tvj = 25C
	IF	150	A
	IFRM	300	A	tP = 1 ms
	It	1700 - 1450	As	VR = 0 V, tP = 10 ms
	VF	1.45 - 1.95	V	IF = 150 A, VGE = 0 V
	RthJC	0.55 - 0.60	K/W	per Diode
Diode, D5-D6	VRRM	650	V	Tvj = 25C
	IF	150	A
	IFRM	300	A	tP = 1 ms
	It	2450 - 2150	As	VR = 0 V, tP = 10 ms
	VF	1.45 - 1.95	V	IF = 150 A, VGE = 0 V
	RthJC	0.50 - 0.55	K/W	per Diode
NTC-Thermistor	R25	5.00	k	TC = 25C
	R/R	-5 - 5	%	TC = 100C, R100 = 493
	P25	20.0	mW	TC = 25C
	B25/50	3375	K
Module	VISOL	2.5	kV	RMS, f = 50 Hz, t = 1 min.
	LsCE	15	nH
	RCC'+EE'	2.00	m	TC = 25C, per switch