Soft Starter Module Infineon STT1900N18P55XPSA2 Featuring High Overload Current and Surge Capability

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Product Description

Product Overview

The Sanftanlauf-Modul Soft Starter Module sTT1900N18P55 is an advanced power electronic component designed for high reliability and efficiency. Featuring pressure contact technology and an integrated optimized heatsink, it is suitable for applications such as soft starters, bypass switches, power controllers, and static switches. This module utilizes Advanced Medium Power Technology (AMPT).

Product Attributes

Brand: Infineon BIP (implied by website and email)
Model: sTT1900N18P55
Date of Publication: 2020-04-01
Revision: 3.1

Technical Specifications

Parameter	Symbol	Value	Unit	Condition
Maximum rated values	VDRM, VRRM	1800	V	Tvj = +25C... Tvj max
	VDSM, VRSM	1850	V	Tvj = +25C... Tvj max
	Ioverload	1900	A	W1C; sin.180;t overload= 21s; Tvj=155C; Tvjstart=40C
Surge current	ITSM	17000	A	Tvj = 25C, tP = 10ms
Surge current	ITSM	14000	A	Tvj = Tvj max, tP = 10ms
It-value	It	1445000	As	Tvj = 25C, tP = 10ms
It-value	It	980000	As	Tvj = Tvj max, tP = 10ms
Critical rate of rise of on-state current	(diT/dt)cr	250	A/s	DIN IEC 747-6; f = 50Hz, iGM = 1A, diG/dt = 1A/s
Critical rate of rise of off-state voltage	(dvD/dt)cr	1000	V/s	Tvj = Tvj max, vD = 0,67 VDRM; 6.Kennbuchstabe / 6th letter F
Characteristic values	vT max.	1,32	V	Tvj = Tvj max , iT = 1500 A
	V(TO) max.	0,9	V	Tvj = Tvj max
	rT max.	0,28	m	Tvj = Tvj max
Gate trigger current	IGT max.	200	mA	Tvj = 25C, vD = 12V
Gate trigger current	IGT max.	200	mA	Tvj = 25C, vD = 12V
Gate trigger voltage	VGT max.	2	V	Tvj = 25C, vD = 12V
Gate trigger voltage	VGT max.	2	V	Tvj = 25C, vD = 12V
Gate non-trigger current	IGD max.	10	mA	Tvj = Tvj max , vD = 12V
Gate non-trigger current	IGD max.	5	mA	Tvj = Tvj max , vD = 0,5 VDRM
Gate non-trigger voltage	VGD max.	0,2	V	Tvj = Tvj max , vD = 0,5 VDRM
Holding current	IH max.	300	mA	Tvj = 25C, vD = 12V, RA = 1
Latching current	IL max.	1200	mA	Tvj = 25C, vD = 12V, RGK 10; iGM = 1A, diG/dt = 1A/s, tg = 20s
Forward and reverse off-state current	iD+ iR max.	180	mA	Tvj = Tvj max; vD = VDRM, vR = VRRM; W1C
Gate controlled delay time	tgd max.	3	s	DIN IEC 747-6; Tvj = 25C, iGM = 1A, diG/dt = 1A/s
Circuit commutated turn-off time	tq typ.	250	s	Tvj = Tvj max, iTM = ITAVM; vRM = 100 V, vDM = 0,67 VDRM; dvD/dt = 20 V/s, -diT/dt = 10 A/s; 5.Kennbuchstabe / 5th letter O
Thermal resistance, junction to reference point (per Module, DC)	RthJR(21s)1) max.	0,029	K/W	per Module / per Module, DC
	RthJR(21s)1) max.	0,058	K/W	per arm, DC
	RthJR(21s)1) max.	0,031	K/W	per Module / per Module, = 180 sin
	RthJR(21s)1) max.	0,061	K/W	per arm, = 180 sin
Thermal resistance, junction to ambient	RthJA(21s) max.	0,042	K/W	per Module / per Module, DC
	RthJA(21s) max.	0,084	K/W	per arm, DC
	RthJA(21s) max.	0,044	K/W	per Module / per Module, = 180 sin
	RthJA(21s) max.	0,087	K/W	per arm, = 180 sin
Maximum junction temperature	Tvj max	125	C	2)
Operating temperature	Tc op	-40...+125	C	2)
Storage temperature	Tstg	-40...+130	C
Terminal connection torque (M6)		10	Nm	Toleranz / tolerance 10%
Weight	G typ.	1300	g
Creepage distance		6,3	mm
Vibration resistance		50	m/s	f = 50 Hz