Silicon NPN Power Transistor ISC 2SC4793 Designed for Power Amplifier and Driver Stage Applications

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Product Description

Product Overview

The 2SC4793 is a Silicon NPN Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-to-lot variations for robust device performance. This transistor is suitable for power amplifier and driver stage amplifier applications.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Material: Silicon
Type: NPN Power Transistor

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC= 10mA ; IB= 0	230			V
Collector-Emitter Saturation Voltage	VCE(sat)	IC= 500mA; IB= 50mA			1.5	V
Base-Emitter On Voltage	VBE(on)	IC= 500mA ; VCE= 5V		1.0		V
Collector Cutoff Current	ICBO	VCB= 230V ; IE=0			1.0	A
Emitter Cutoff Current	IEBO	VEB= 5V; IC=0			1.0	A
DC Current Gain	hFE	IC= 100mA; VCE= 5V	100	320
Output Capacitance	COB	IE= 0; VCB= 10V; f= 1MHz			20	pF
Current-GainBandwidth Product	fT	IC= 100mA ; VCE= 10V			100	MHz
Collector-Base Voltage	VCBO				230	V
Collector-Emitter Voltage	VCEO				230	V
Emitter-Base Voltage	VEBO				5	V
Collector Current-Continuous	IC				1	A
Base Current-Continuous	IB				0.1	A
Collector Power Dissipation @Ta=25	PC	@Ta=25			2	W
Collector Power Dissipation @TC=25	PC	@TC=25			20	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150