Silicon NPN Power Transistor ISC 2SC3866 Designed for High Frequency Inverters and Power Amplifiers

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Product Description

Product Overview

The 2SC3866 is a Silicon NPN Power Transistor from ISC, designed for high-voltage applications. It features a high breakdown voltage of 900V (V(BR)CBO), high switching speed, and high reliability with minimum lot-to-lot variations. This transistor is suitable for switching regulators, ultrasonic generators, high-frequency inverters, and general-purpose power amplifiers.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Material: Silicon
Type: NPN Power Transistor

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 10mA; IB= 0	800			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= 1mA; IE= 0	900			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= 1mA; IC= 0			10	V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 1A; IB= 0.2A			1.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 1A; IB= 0.2A			1.5	V
ICBO	Collector Cutoff Current	VCB= 900V; IE= 0			1.0	mA
IEBO	Emitter Cutoff Current	VEB= 10V; IC= 0			1.0	mA
hFE	DC Current Gain	IC= 1A ; VCE= 5V	10
ton	Turn-on Time	IC= 2A , IB1= 0.4A; IB2= -0.8A RL=150; PW=20s; Duty2%		1.0		s
tstg	Storage Time			4.0		s
tf	Fall Time			0.8		s
VCBO	Collector-Base Voltage				900	V
VCEO	Collector-Emitter Voltage				800	V
VEBO	Emitter-Base Voltage				10	V
IC	Collector Current-Continuous				3	A
IB	Base Current-Continuous				1	A
PC	Collector Power Dissipation @ TC=25				40	W
TJ	Junction Temperature				150
Tstg	Storage Temperature Range		-55		150
Rth j-c	Thermal Resistance,Junction to Case			3.0		/W