Low forward voltage reverse conducting diode integrated in Infineon IHW30N65R5 IGBT for power control

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Product Description

The IHW30N65R5 is a Reverse conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic reverse-conducting diode with a low forward voltage. It utilizes TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat and Eoff, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM
Certifications: JESD-022, RoHS compliant
Lead Plating: Pb-free
PSpice Models: Available at http://www.infineon.com/igbt/

Technical Specifications

Type	VCE	IC (TC=25C)	VCEsat (Tvj=25C)	Tvjmax	Marking	Package
IHW30N65R5	650V	60.0A	1.35V	175C	H30ER5	PG-TO247-3

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.20mA	650	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 30.0A, Tvj = 25C	1.35	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 30.0A, Tvj = 175C	1.70	-
Diode forward voltage	VF	VGE = 0V, IF = 30.0A, Tvj = 25C	1.70	V
Diode forward voltage	VF	VGE = 0V, IF = 30.0A, Tvj = 175C	2.10	-
Gate-emitter threshold voltage	VGE(th)	IC = 0.30mA, VCE = VGE	3.2 - 4.8	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	- 40	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	- 100	nA
Transconductance	gfs	VCE = 20V, IC = 30.0A	- 35.0	S
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	- 3690	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	- 34	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	- 15	pF
Gate charge	QG	VCC = 520V, IC = 30.0A, VGE = 15V	- 153.0	nC
Internal emitter inductance	LE	measured 5mm from case	- 13.0	nH
Turn-on delay time	td(on)	Tvj = 25C	- 29	ns
Rise time	tr	Tvj = 25C	- 17	ns
Turn-off delay time	td(off)	Tvj = 25C	- 220	ns
Fall time	tf	Tvj = 25C	- 8	ns
Turn-on energy	Eon	Tvj = 25C	- 0.85	mJ
Turn-off energy	Eoff	Tvj = 25C	- 0.24	mJ
Total switching energy	Ets	Tvj = 25C	- 1.09	mJ
Diode reverse recovery time	trr	Tvj = 25C	- 95	ns
Diode reverse recovery charge	Qrr	Tvj = 25C	- 1.90	C
Diode peak reverse recovery current	Irrm	Tvj = 25C	- 28.0	A
Diode peak rate of fall of reverse recovery current	dirr/dt	Tvj = 25C	- -2000	A/s
Turn-on delay time	td(on)	Tvj = 175C	- 28	ns
Rise time	tr	Tvj = 175C	- 16	ns
Turn-off delay time	td(off)	Tvj = 175C	- 240	ns
Fall time	tf	Tvj = 175C	- 18	ns
Turn-on energy	Eon	Tvj = 175C	- 0.95	mJ
Turn-off energy	Eoff	Tvj = 175C	- 0.41	mJ
Total switching energy	Ets	Tvj = 175C	- 1.36	mJ
Diode reverse recovery time	trr	Tvj = 175C	- 114	ns
Diode reverse recovery charge	Qrr	Tvj = 175C	- 3.30	C
Diode peak reverse recovery current	Irrm	Tvj = 175C	- 45.0	A
Diode peak rate of fall of reverse recovery current	dirr/dt	Tvj = 175C	- -1650	A/s

Parameter	Symbol	Conditions	Max. Value	Unit
IGBT thermal resistance, junction - case	Rth(j-c)	Characteristic	0.81	K/W
Diode thermal resistance, junction - case	Rth(j-c)	Characteristic	3.81	K/W
Thermal resistance junction - ambient	Rth(j-a)		40	K/W