Industrial Silicon PNP Darlington Transistor ISC FW26025A1 Featuring High Current Gain and Operation

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Product Description

Product Overview

The ISC FW26025A1 is a Silicon PNP Darlington Power Transistor designed for linear and switching industrial equipment. It offers high DC current gain (hFE = 5000(Min)@ IC= -2A) and a Collector-Emitter Sustaining Voltage of -100V(Min). The device features minimum lot-to-lot variations for robust performance and reliable operation.

Product Attributes

Brand: ISC
Registered Trademark: ISC & ISCsemi
Material: Silicon

Technical Specifications

Symbol	Parameter	Value	Unit	Conditions
VCEO(SUS)*	Collector-Emitter Sustaining Voltage	-100	V	IC= -100mA, IB= 0
VCE(sat)-1*	Collector-Emitter Saturation Voltage	-2.0	V	IC= -10A ,IB= -40mA
VCE(sat)-2*	Collector-Emitter Saturation Voltage	-3.0	V	IC= -20A ,IB= -200mA
VBE(sat)*	Base-Emitter Saturation Voltage	-4	V	IC= -20A ,IB= -200mA
V BE(on)*	Base-Emitter On Voltage	-2.8	V	IC= -10A ; VCE= -3V
ICEO	Collector Cutoff current	-1	mA	VCE= -50V, IB= 0
ICEV	Collector Cutoff current(VBE=-1.5V)	-0.5	mA	VCE= -100V, IB= 0
		-5		VCE= -100V, IB= 0,Tc=150
IEBO	Emitter Cutoff Current	-2	mA	VEB= -5V; IC= 0
hFE-1*	DC Current Gain	5000		IC= -2A ; VCE= -3V
hFE-2*	DC Current Gain	750-18000		IC= -10A ; VCE= -3V
hFE-3*	DC Current Gain	200		IC= -30A ; VCE= -3V
VCBO	Collector-Base Voltage	-100	V
VCEO	Collector-Emitter Voltage	-100	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current-Continuous	-20	A
ICM	Collector Current-Peak	-40	A
IB	Base Current- Continuous	-0.5	A
PC	Collector Power Dissipation @TC=25	160	W
Tj	Junction Temperature	200
Tstg	Storage Temperature Range	-65~200
Rth j-c	Thermal Resistance, Junction to Case	1.09	/W