High Current Silicon NPN Power Transistor ISC 2SC3709A with Low Collector Saturation Voltage Feature

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Product Description

ISC Silicon NPN Power Transistor 2SC3709A

The ISC 2SC3709A is a Silicon NPN Power Transistor designed for high current switching applications. It features a low collector saturation voltage (VCE(sat)= 0.4V(Max)@IC= 6A) and good linearity of hFE. This transistor is a complement to the 2SA1451A type.

Product Attributes

Brand: ISC
Registered Trademark: ISC & ISCsemi
Material: Silicon
Type: NPN Power Transistor
Complementary Type: 2SA1451A

Technical Specifications

Parameter	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage (V(BR)CEO)	IC= 50mA ; IB= 0			50	V
Collector-Emitter Saturation Voltage (VCE(sat))	IC= 6A; IB= 0.3A			0.4	V
Base-Emitter Saturation Voltage (VBE(sat))	IC= 6A; IB= 0.3A			1.2	V
Collector Cutoff Current (ICBO)	VCB= 60V; IE= 0			10	A
Emitter Cutoff Current (IEBO)	VEB= 6V; IC= 0			10	A
DC Current Gain (hFE-1)	IC= 1A; VCE= 1V	70		240
DC Current Gain (hFE-2)	IC= 6A; VCE= 1V	40
Output Capacitance (COB)	IE= 0; VCB= 10V; ftest= 1MHz			180	pF
Current-GainBandwidth Product (fT)	IC= 1A; VCE= 5V		90		MHz
Turn-on Time (ton)	IB1= -IB2= 0.3A, RL= 5; VCC30V			0.2	s
Storage Time (tstg)	IB1= -IB2= 0.3A, RL= 5; VCC30V		1.0		s
Fall Time (tf)	IB1= -IB2= 0.3A, RL= 5; VCC30V			0.2	s

Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	50	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current-Continuous	12	A
ICP	Pulse Collector Current	30	A
IB	Base Current-Continuous	2	A
PC	Collector Power Dissipation @ TC=25	30	W
TJ	Junction Temperature	150
Tstg	Storage Temperature Range	-55~150