PNP Power Transistor ISC 2SA1494 Featuring High Voltage and Linear DC Current Gain for General Purpose

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Product Description

Product Overview

The INCHANGE Semiconductor 2SA1494 is a silicon PNP power transistor designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -200V(Min) and good linearity of hFE, making it a complementary type to the 2SC3858.

Product Attributes

Brand: INCHANGE Semiconductor
Origin: isc
Material: Silicon PNP

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= -50mA ; IB= 0	-200			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -10A; IB= -1A		-2.5		V
ICBO	Collector Cutoff Current	VCB= -200V ; IE= 0			-100	A
IEBO	Emitter Cutoff Current	VEB= -6V; IC= 0			-100	A
hFE	DC Current Gain	IC= -8A ; VCE= -4V	50		180
COB	Output Capacitance	IE= 0 ; VCB= -10V;ftest= 1.0MHz		500		pF
fT	Current-GainBandwidth Product	IE= 1A ; VCE= -12V		20		MHz
ton	Turn-on Time	IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V				0.6	s
tstg	Storage Time					0.9	s
tf	Fall Time					0.2	s
VCBO	Collector-Base Voltage		-200			V
VCEO	Collector-Emitter Voltage		-200			V
VEBO	Emitter-Base Voltage		-6			V
IC	Collector Current-Continuous		-17			A
IB	Base Current-Continuous		-5			A
PC	Collector Power Dissipation @ TC=25		200			W
TJ	Junction Temperature			150
Tstg	Storage Temperature Range		-55	~	150
hFE Classifications			Y: 50-100, P: 70-140, G: 90-180