Infineon IGW40N60TP 600V IGBT featuring TRENCHSTOP technology low EMI and short tail current for converters

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Product Description

Product Overview

The IGW40N60TP is a 600V DuoPack IGBT from Infineon's TRENCHSTOPTM Performance series. It utilizes TRENCHSTOPTM technology, offering very low VCEsat, low turn-off losses, short tail current, and low EMI. This IGBT is qualified according to JEDEC for target applications and is RoHS compliant. It is suitable for applications such as drives, solar inverters, uninterruptible power supplies, and converters with medium switching frequency.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM Performance
Compliance: Pb-free lead plating; RoHS compliant
Certifications: Qualified according to JEDEC for target applications

Technical Specifications

Type	VCE	IC	VCEsat, Tvj=25C	Tvjmax	Marking	Package
IGW40N60TP	600V	40A	1.6V	175C	G40DTP	PG-TO247-3

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 2.00mA	600	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 40.0A, Tvj = 25C	1.60	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 40.0A, Tvj = 175C	1.94	V
Gate-emitter threshold voltage	VGE(th)	IC = 0.64mA, VCE = VGE	4.1 - 5.7	V
Zero gate voltage collector current	ICES	VCE = 600V, VGE = 0V, Tvj = 25C	-	A
Zero gate voltage collector current	ICES	VCE = 600V, VGE = 0V, Tvj = 175C	40	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	- 100	nA
Transconductance	gfs	VCE = 20V, IC = 40.0A	40.0	S
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	1400	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	60	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	48	pF
Gate charge	QG	VCC = 480V, IC = 40.0A, VGE = 15V	177.0	nC
Internal emitter inductance	LE	measured 5mm from case	13.0	nH
Collector-emitter voltage, Tvj 25C	VCE		600	V
DC collector current, limited by Tvjmax, TC = 25C	IC		67.0	A
DC collector current, limited by Tvjmax, TC = 100C	IC		48.0	A
Pulsed collector current, tp limited by Tvjmax	ICpuls		120.0	A
Turn off safe operating area		VCE 600V, Tvj 175C, tp = 1s	120.0	A
Gate-emitter voltage	VGE		20	V
Short circuit withstand time	tSC	VGE = 15.0V, VCC 400V, Tvj = 150C	5	s
Power dissipation, TC = 25C	Ptot		246.0	W
Power dissipation, TC = 100C	Ptot		123.0	W
Operating junction temperature	Tvj		-40...+175	C
Storage temperature	Tstg		-55...+150	C
Soldering temperature, wave soldering 1.6mm from case for 10s			260	C
Mounting torque, M3 screw	M	Maximum of mounting processes	0.6	Nm
IGBT thermal resistance, junction - case	Rth(j-c)		0.41 - 0.61	K/W
Turn-on delay time	td(on)	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	18	ns
Rise time	tr	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	30	ns
Turn-off delay time	td(off)	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	222	ns
Fall time	tf	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	18	ns
Turn-on energy	Eon	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	1.06	mJ
Turn-off energy	Eoff	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	0.61	mJ
Total switching energy	Ets	Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	1.67	mJ
Turn-on delay time	td(on)	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	19	ns
Rise time	tr	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	30	ns
Turn-off delay time	td(off)	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	273	ns
Fall time	tf	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	47	ns
Turn-on energy	Eon	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	1.63	mJ
Turn-off energy	Eoff	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	1.05	mJ
Total switching energy	Ets	Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1	2.68	mJ