Silicon PNP Transistor ISC 2SA1744 Ideal for in DC DC Converters and High Speed Switching Circuits

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Product Description

Product Overview

The ISC 2SA1744 is a Silicon PNP Power Transistor designed for high-speed switching applications. It features high DC current gain (hFE) at low saturation voltage (VCE(sat)), making it ideal for use as a driver in DC/DC converters and actuators. Its robust performance and reliable operation are further enhanced by minimum lot-to-lot variations.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Origin: Silicon
Material: Silicon

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Sustaining Voltage	VCEO(SUS)	VCEO(SUS)= -60V(Min)	-60	V
Collector-Emitter Sustaining Voltage	VCEO(SUS)	IC= -8.0A ; IB= -0.8A, L= 1mH	-60	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC= -8A; IB= -0.4A	-0.3	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC= -12A; IB= -0.6A	-0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= -8A; IB= -0.4A	-1.2	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= -12A; IB= -0.6A	-1.5	V
Collector Cutoff Current	ICBO	VCB= -60V ; IE=0	-10	A
Emitter Cutoff Current	IEBO	VEB= -5V; IC=0	-10	A
DC Current Gain	hFE	IC= -1.5A; VCE= -2V	100
		IC= -3.0A; VCE= -2V	100-400
		IC= -8.0A; VCE= -2V	60
Collector-Base Voltage	VCBO		-100	V
Collector-Emitter Voltage	VCEO		-60	V
Emitter-Base Voltage	VEBO		-7.0	V
Collector Current-Continuous	IC		-15	A
Collector Current-Pulse	ICM		-30	A
Base Current-Continuous	IB		-7.5	A
Total Power Dissipation	PT	@TC=25	30	W
Total Power Dissipation	PT	@Ta=25	2.0	W
Junction Temperature	TJ		150
Storage Temperature	Tstg		-55~150