Silicon NPN Darlington Power Transistor ISC 2SD1415A with 100V Breakdown Voltage and High Current Gain

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Product Description

Product Overview

The 2SD1415A is a Silicon NPN Darlington Power Transistor from ISC. It is designed for high power switching applications, including hammer driver and pulse motor driver applications. Key features include a high Collector-Emitter Breakdown Voltage of 100V(Min), a low Collector-Emitter Saturation Voltage of 1.5V(Max) @ IC= 3A, and a high DC Current Gain of 2000(Min) @ IC= 3A, VCE= 3V. This robust device offers minimum lot-to-lot variations for reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Material: Silicon
Type: NPN Darlington Power Transistor

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC= 30mA ; IB= 0	100			V
Collector-Emitter Saturation Voltage	VCE(sat)	IC= 3A; IB= 6mA			1.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 3A; IB= 6mA			2.0	V
Collector Cutoff Current	ICBO	VCB= 100V; IE= 0			100	A
Emitter Cutoff Current	IEBO	VEB= 6V; IC= 0			3.0	mA
DC Current Gain	hFE -1	IC= 3A ; VCE= 3V	2000		15000
DC Current Gain	hFE -2	IC= 6A ; VCE= 3V	1000
Turn-on Time	ton	IB1= IB2= 6mA; RL= 15; VCC45V PW=20s; Duty Cycle1%			0.3	s
Storage Time	tstg				5.1	s
Fall Time	tf				0.6	s

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	120	V
Collector-Emitter Voltage	VCEO	100	V
Emitter-Base Voltage	VEBO	6	V
Collector Current-Continuous	IC	7	A
Collector Current-Peak	ICM	10	A
Base Current-Continuous	IB	0.7	A
Collector Power Dissipation @ TC=25	PC	25	W
Collector Power Dissipation @ Ta=25	PC	2.0	W
Junction Temperature	TJ	150
Storage Temperature Range	Tstg	-55~150