Power Transistor ISC 2N6036 Silicon PNP Darlington for Amplifier and Low Speed Switching Applications

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Product Description

Product Overview

The 2N6036 is a Silicon PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750(Min) @ IC= -2A and a Collector-Emitter Sustaining Voltage of VCEO(SUS) = -80V(Min.). This device is a complement to the 2N6039 type, ensuring robust device performance and reliable operation with minimum lot-to-lot variations.

Product Attributes

Brand: INCHANGE Semiconductor
Registered Trademark: isc, iscsemi
Material: Silicon

Technical Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= -10mA; IB= 0	-80		V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= -2A; IB= -8mA		-2.0	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= -4A; IB= -40mA		-3.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= -4A; IB= -40mA		-4.0	V
VBE(on)	Base-Emitter On Voltage	IC= -2A; VCE= -3V		-2.8	V
ICEO	Collector Cutoff Current	VCE= -80V; IB= 0		-0.1	mA
ICEX	Collector Cutoff Current	VCE=-80V;VBE(off)=-1.5V;TC= 125	-0.1	-0.5	mA
ICBO	Collector Cutoff Current	VCB= -80V; IE= 0		-0.5	mA
IEBO	Emitter Cutoff Current	VEB= -5V; IC= 0		-2.0	mA
hFE-1	DC Current Gain	IC= -0.5A ; VCE= -3V	500
hFE-2	DC Current Gain	IC= -2A ; VCE= -3V	750	15000
hFE-3	DC Current Gain	IC= -4A ; VCE= -3V	100
COB	Output Capacitance	IE=0; VCB= -10V; f= 0.1MHz		200	pF
VCBO	Collector-Base Voltage		-80		V
VCEO	Collector-Emitter Voltage		-80		V
VEBO	Emitter-Base Voltage		-5		V
IC	Collector Current-Continuous		-4		A
ICM	Collector Current-Peak		-8		A
IB	Base Current		-0.1		A
PC	Collector Power Dissipation	TC=25		40	W
Tj	Junction Temperature			150
Tstg	Storage Temperature Range		-65~150
Rth j-c	Thermal Resistance,Junction to Case			3.12	/W
Rth j-a	Thermal Resistance,Junction to Ambient			83.3	/W