IGBT module Infineon IGW30N65L5 650V 30A low VCEsat transistor suitable for solar inverter systems

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Product Description

Product Overview

The IGW30N65L5 is a 650V IGBT from Infineon's TRENCHSTOP 5 technology, offering a low VCE(sat) for improved efficiency. This fifth-generation IGBT provides a best-in-class tradeoff between conduction and switching losses, featuring a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for demanding applications such as uninterruptible power supplies, solar photovoltaic inverters, and welding machines.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOP 5
Series: Low VCE(sat) series fifth generation
Certifications: JEDEC qualified, Pb-free lead plating, RoHS compliant

Technical Specifications

Type	VCE	IC	VCEsat (Tvj=25C)	Tvjmax	Marking	Package
IGW30N65L5	650V	30A	1.05V	175C	G30EL5	PG-TO247-3

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	650	V
DC collector current, TC = 25C	IC	85.0	A
DC collector current, TC = 100C	IC	62.0	A
Pulsed collector current	ICpuls	120.0	A
Gate-emitter voltage	VGE	20	V
Transient Gate-emitter voltage	VGE	30	V
Power dissipation, TC = 25C	Ptot	227.0	W
Power dissipation, TC = 100C	Ptot	114.0	W
Operating junction temperature	Tvj	-40...+175	C
Storage temperature	Tstg	-55...+150	C
Soldering temperature, wave soldering 1.6mm from case for 10s		260	C
Mounting torque, M3 screw	M	0.6	Nm

Thermal Resistance

Parameter	Symbol	Conditions	Max. Value	Unit
IGBT thermal resistance, junction - case	Rth(j-c)		0.66	K/W
Thermal resistance junction - ambient	Rth(j-a)		40	K/W

Electrical Characteristics

Parameter	Symbol	Conditions	min.	typ.	max.	Unit
Static Characteristic
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.20mA	650	-	-	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 30.0A, Tvj = 25C	-	1.05	-	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 30.0A, Tvj = 100C	-	1.05	1.35	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 30.0A, Tvj = 150C	-	1.04	-	V
Gate-emitter threshold voltage	VGE(th)	IC = 0.40mA, VCE = VGE	4.2	5.0	5.8	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	-	400.0	-	A
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 150C	-	2000.0	-	A
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 175C	-	40.0	-	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	-	-	100	nA
Transconductance	gfs	VCE = 20V, IC = 30.0A	-	65.0	-	S
Dynamic Characteristic
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	-	4900	-	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	-	42	-	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	-	18	-	pF
Gate charge	QG	VCC = 520V, IC = 30.0A, VGE = 15V	-	168.0	-	nC
Internal emitter inductance	LE	measured 5mm from case	-	13.0	-	nH
Switching Characteristic, Inductive Load (Tvj = 25C)
Turn-on delay time	td(on)	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	33	-	ns
Rise time	tr	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	11	-	ns
Turn-off delay time	td(off)	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	308	-	ns
Fall time	tf	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	51	-	ns
Turn-on energy	Eon	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	0.47	-	mJ
Turn-off energy	Eoff	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	1.35	-	mJ
Total switching energy	Ets	Tvj = 25C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	1.82	-	mJ
Switching Characteristic, Inductive Load (Tvj = 150C)
Turn-on delay time	td(on)	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	31	-	ns
Rise time	tr	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	13	-	ns
Turn-off delay time	td(off)	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	370	-	ns
Fall time	tf	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	150	-	ns
Turn-on energy	Eon	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	0.68	-	mJ
Turn-off energy	Eoff	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	2.18	-	mJ
Total switching energy	Ets	Tvj = 150C, VCC = 400V, IC = 30.0A, VGE = 0.0/15.0V, RG = 10.0	-	2.86	-	mJ