EconoPIM3 Module Infineon FP200R12N3T7 with Low Thermal Resistance and Overload Operation up to 175C
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Product Description
Product Description
The EconoPIM3 module features the 7th generation TRENCHSTOP IGBT7 and the 7th generation Emitter Controlled Diode with integrated NTC temperature sensing. It is designed for applications requiring high performance and reliability, offering advantages such as low VCEsat and overload operation up to 175C. The module utilizes a copper base plate and an Al2O3 substrate for low thermal resistance. It is suitable for auxiliary inverters, motor drives, and servo drives.
Product Attributes
- Brand: Infineon
- Product Line: EconoPIM3
- Model: FP200R12N3T7
- Certifications: Compliant with relevant tests according to IEC 60747, 60749, and 60068 standards for industrial applications.
Technical Specifications
| Component | Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|---|
| IGBT, Inverter | Collector-Emitter Voltage | VCES | Tvj = 25 C | 1200 | V |
| Continuous Collector DC Current | ICDC | Tvj max = 175 C, TC = 70 C | 200 | A | |
| Collector Repetitive Peak Current | ICRM | tp limited by Tvj op | 400 | A | |
| Gate-Emitter Peak Voltage | VGES | 20 | V | ||
| Collector-Emitter Saturation Voltage | VCEsat | IC = 200 A, VGE = 15 V, Tvj = 25 C | 1.55 - 1.80 | V | |
| Gate Threshold Voltage | VGEth | IC = 4.6 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V | |
| Gate Charge | QG | VGE = 15 V, VCC = 600 V | 3.34 | C | |
| Turn-on Delay Time (inductive load) | tdon | IC = 200 A, VCC = 600 V, VGE = 15 V, RGon = 2.7 , Tvj = 25 C | 0.203 | s | |
| Turn-off Delay Time (inductive load) | tdoff | IC = 200 A, VCC = 600 V, VGE = 15 V, RGoff = 2.7 , Tvj = 25 C | 0.351 | s | |
| Turn-on Energy (per pulse) | Eon | IC = 200 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGon = 2.7 , di/dt = 2050 A/s (Tvj = 175 C), Tvj = 25 C | 25.1 | mJ | |
| Turn-off Energy (per pulse) | Eoff | IC = 200 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGoff = 2.7 , dv/dt = 3250 V/s (Tvj = 175 C), Tvj = 25 C | 12.9 | mJ | |
| Junction-to-Case Thermal Resistance | RthJC | per IGBT | 0.231 | K/W | |
| Diode, Inverter | Repetitive Peak Reverse Voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continuous Forward DC Current | IF | 200 | A | ||
| Forward Peak Current | IFRM | tp = 1 ms | 400 | A | |
| I2t Value | I2t | tp = 10 ms, VR = 0 V, Tvj = 125 C | 3700 | As | |
| Forward Voltage | VF | IF = 200 A, VGE = 0 V, Tvj = 25 C | 1.72 - 2.10 | V | |
| Peak Reverse Recovery Current | IRM | VCC = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2050 A/s (Tvj = 175 C), Tvj = 25 C | 79.6 | A | |
| Repetitive Recovery Charge | Qr | VCC = 600 V, IF = 200 A, VGE = -15 V, -diF/dt = 2050 A/s (Tvj = 175 C), Tvj = 25 C | 15.7 | C | |
| Junction-to-Case Thermal Resistance | RthJC | per diode | 0.376 | K/W | |
| Diode, Rectifier | Repetitive Peak Reverse Voltage | VRRM | Tvj = 25 C | 1600 | V |
| Max. RMS Current (per chip) | IFRMSM | TC = 110 C | 150 | A | |
| Max. Rectifier Output RMS Current | IRMSM | TC = 110 C | 150 | A | |
| Forward Surge Current | IFSM | tp = 10 ms, Tvj = 25 C | 1800 | A | |
| I2t Value | I2t | tp = 10 ms, Tvj = 25 C | 16200 | As | |
| Forward Voltage | VF | IF = 200 A, Tvj = 150 C | 1.02 | V | |
| Junction-to-Case Thermal Resistance | RthJC | per diode | 0.278 | K/W | |
| IGBT, Brake Chopper | Collector-Emitter Voltage | VCES | Tvj = 25 C | 1200 | V |
| Continuous Collector DC Current | ICDC | Tvj max = 175 C, TC = 75 C | 150 | A | |
| Collector Repetitive Peak Current | ICRM | tp limited by Tvj op | 300 | A | |
| Gate-Emitter Peak Voltage | VGES | 20 | V | ||
| Collector-Emitter Saturation Voltage | VCEsat | IC = 150 A, VGE = 15 V, Tvj = 25 C | 1.55 - 1.80 | V | |
| Gate Threshold Voltage | VGEth | IC = 3.5 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V | |
| Gate Charge | QG | VGE = 15 V, VCC = 600 V | 2.5 | C | |
| Turn-on Delay Time (inductive load) | tdon | IC = 150 A, VCC = 600 V, VGE = 15 V, RGon = 5.6 , Tvj = 25 C | 0.197 | s | |
| Turn-off Delay Time (inductive load) | tdoff | IC = 150 A, VCC = 600 V, VGE = 15 V, RGoff = 5.6 , Tvj = 25 C | 0.419 | s | |
| Turn-on Energy (per pulse) | Eon | IC = 150 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGon = 5.6 , di/dt = 1150 A/s (Tvj = 175 C), Tvj = 25 C | 12.2 | mJ | |
| Turn-off Energy (per pulse) | Eoff | IC = 150 A, VCC = 600 V, L = 35 nH, VGE = 15 V, RGoff = 5.6 , dv/dt = 3100 V/s (Tvj = 175 C), Tvj = 25 C | 10.5 | mJ | |
| Junction-to-Case Thermal Resistance | RthJC | per IGBT | 0.290 | K/W | |
| Module | Insulation Test Voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Creepage Distance | dCreep | Terminals to heatsink | 10.0 | mm | |
| Clearance | dClear | Terminals to heatsink | 7.5 | mm |
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