1200V 150A IGBT half bridge module JIAENSEMI GL150HF120T1SZ1 ideal for AC DC servo drive amplifiers
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Product Description
Product Overview
The JIAEN GL150HF120T1SZ1 is a 1200V, 150A Trench FS IGBT half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC/DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.6V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
- Material of module baseplate: Cu
- Internal isolation: Al2O3
- Comperative tracking index (CTI): >200
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| IGBT Maximum Rated Values | Collector-Emitter Voltage | 1200 | V | |||
| Gate-Emitter Voltage | ±20 | V | ||||
| Continuous Collector Current | IC (TC=70,Tvj max=150) | 150 | A | |||
| Repetitive Peak Collector Current | ICRM (tp= 1 ms) | 300 | A | |||
| Maximum Power Dissipation | PD (TC=25,Tvj max=150) | 658 | W | |||
| IGBT Characteristics | Collector-Emitter Saturation Voltage | VGE=15V, IC=150A, Tvj=25 | - | 1.6 | 1.9 | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=150A, Tvj=150 | - | 1.9 | - | V | |
| Gate Threshold Voltage | VGE=VCE, IC=5.7mA | 5.0 | 5.8 | 6.6 | V | |
| Total Gate Charge | VGE=-15V+15V | - | 1.05 | - | uC | |
| Capacitance | Input Capacitance | VCE=25V VGE=0V f=100KHz | - | 29.8 | - | nF |
| Output Capacitance | - | 0.78 | - | nF | ||
| Reverse Transfer Capacitance | - | 0.24 | - | nF | ||
| Leakage Current | Collector-Emitter Leakage Current | VCE=1200V, VGE=0V | - | - | 1.0 | mA |
| Gate Leakage Current, Forward | VGE=20V, VCE=0V | - | - | 200 | nA | |
| Diode Maximum Rated Values | Repetitive peak reverse voltage | VRRM | 1200 | V | ||
| Continuous DC Forward Current | IF | 150 | A | |||
| Diode Characteristics | Diode Forward Voltage | IF=150A, VGE=0V, Tvj=25 | - | 2.7 | 3.2 | V |
| Diode Forward Voltage | IF=150A, VGE=0V, Tvj=150 | - | 1.9 | - | V | |
| Thermal Resistance | Thermal resistance, junction to case (IGBT) | Rth j-c | - | - | 0.19 | K/W |
| Thermal Resistance | Thermal resistance, junction to case (Diode) | Rth j-c | - | - | 0.31 | K/W |
| Temperature | Temperature under switching condition | Tvj op | -40 | - | 150 | |
| Isolation | Module Isolation test voltage RMS, f=50 Hz, t=1 min | VISOL | 4.0 | kV |
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