China PrimePACK2 IGBT Module Infineon FF900R12IP4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode for sale

PrimePACK2 IGBT Module Infineon FF900R12IP4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The FF900R12IP4 is a PrimePACK2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with NTC. It offers extended operation temperature, high DC stability, and excellent short circuit capability. Ideal for high power applications such as auxiliary inverters, motor drives, traction drives, UPS systems, and wind turbines.

Product Attributes

Brand: Infineon (implied by datasheet format)
Package Type: PrimePACK2
Certifications: CTI > 400

Technical Specifications

Parameter	Value	Unit	Notes
Product Name	FF900R12IP4		IGBT Module
VCES	1200	V	Collector-emitter voltage
IC nom	900	A	Continuous DC collector current at TC = 100C
ICRM	1800	A	Repetitive peak collector current (tP = 1 ms)
Ptot	5.10	kW	Total power dissipation at TC = 25C
VGES	+/-20	V	Gate-emitter peak voltage
VCEsat (typ.)	1.70	V	Collector-emitter saturation voltage at IC = 900 A, VGE = 15 V, Tvj = 25C
VGEth (typ.)	5.8	V	Gate threshold voltage at IC = 33.0 mA, VCE = VGE, Tvj = 25C
QG (typ.)	6.40	C	Gate charge at VGE = -15 V ... +15 V
RGint (typ.)	1.2		Internal gate resistor at Tvj = 25C
Cies (typ.)	54.0	nF	Input capacitance at f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Cres (typ.)	2.80	nF	Reverse transfer capacitance at f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
ICES (max.)	5.0	mA	Collector-emitter cut-off current at VCE = 1200 V, VGE = 0 V, Tvj = 25C
IGES (max.)	400	nA	Gate-emitter leakage current at VCE = 0 V, VGE = 20 V, Tvj = 25C
td on (typ.)	0.20	s	Turn-on delay time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C
tr (typ.)	0.14	s	Rise time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C
td off (typ.)	0.70	s	Turn-off delay time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C
tf (typ.)	0.20	s	Fall time, inductive load at IC = 900 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C
Eon (typ.)	71.0	mJ	Turn-on energy loss per pulse at IC = 900 A, VCE = 600 V, LS = 45 nH, VGE = 15 V, di/dt = 4800 A/s, RGon = 1.6 , Tvj = 25C
Eoff (typ.)	125	mJ	Turn-off energy loss per pulse at IC = 900 A, VCE = 600 V, LS = 45 nH, VGE = 15 V, du/dt = 2800 V/s, RGoff = 1.6 , Tvj = 25C
ISC (typ.)	3600	A	Short circuit current at VGE 15 V, VCC = 800 V, VCEmax = VCES - LsCE di/dt, Tvj = 150C, tP 10 s
RthJC (IGBT)	29.5	K/kW	Thermal resistance, junction to case per IGBT
RthCH (IGBT)	14.0	K/kW	Thermal resistance, case to heatsink per IGBT
Tvj op	-40 to 150	C	Temperature under switching conditions
VRRM	1200	V	Repetitive peak reverse voltage
IF	900	A	Continuous DC forward current
IFRM	1800	A	Repetitive peak forward current (tP = 1 ms)
It (typ.)	91.0	kAs	Grenzlastintegral at VR = 0 V, tP = 10 ms, Tvj = 125C
VF (typ.)	1.90	V	Forward voltage at IF = 900 A, VGE = 0 V, Tvj = 25C
IRM (typ.)	500	A	Peak reverse recovery current at IF = 900 A, - diF/dt = 4800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C
Qr (typ.)	90.0	C	Recovered charge at IF = 900 A, - diF/dt = 4800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C
Erec (typ.)	38.0	mJ	Reverse recovery energy at IF = 900 A, - diF/dt = 4800 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C
RthJC (Diode)	53.5	K/kW	Thermal resistance, junction to case per diode
RthCH (Diode)	25.5	K/kW	Thermal resistance, case to heatsink per diode
R25 (NTC)	5.00	k	NTC rated resistance at TC = 25C
R/R (NTC)	-5 to 5	%	Deviation of R100 at TC = 100C
P25 (NTC)	20.0	mW	NTC power dissipation at TC = 25C
B25/50 (NTC)	3375	K	NTC B-value
B25/80 (NTC)	3411	K	NTC B-value
B25/100 (NTC)	3433	K	NTC B-value
VISOL	4.0	kV	Isolation test voltage RMS, f = 50 Hz, t = 1 min.
Material of module baseplate	Cu
Internal isolation	Al2O3		Basic insulation (class 1, IEC 61140)
Creepage distance (terminal to heatsink)	33.0	mm
Creepage distance (terminal to terminal)	33.0	mm
Clearance (terminal to heatsink)	19.0	mm
Clearance (terminal to terminal)	19.0	mm
CTI	> 400		Comperative tracking index
RthCH (Module)	4.50	K/kW	Thermal resistance, case to heatsink per module
LsCE	18	nH	Module stray inductance
RCC'+EE'	0.30	m	Module lead resistance, terminals - chip per switch at TC = 25C
Tstg	-40 to 150	C	Storage temperature
Mounting torque (Screw M5)	3.00 - 6.00	Nm	For module mounting
Mounting torque (Screw M4)	1.8	Nm	For terminal connection
Mounting torque (Screw M8)	8.0 - 10	Nm	For terminal connection
Weight	825	g