1200V 100A IGBT half bridge module JIAENSEMI GL100HF120F1UR1 with high RBSOA capability and low turn off losses

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The GL100HF120F1UR1 is a 1200V, 100A IGBT half-bridge module featuring planar field-stop technology, high RBSOA capability, and low turn-off losses. It is designed for applications such as inductive heating, welding, and high-frequency switching.

Product Attributes

Brand: JIAEN Semiconductor
Origin: Not specified
Material: Al2O3 (Module Baseplate)
Color: Not specified
Certifications: basic insulation (class 1, IEC 61140)

Technical Specifications

Parameter	IGBT Maximum Rated Values	Units	IGBT Characteristics	Test Conditions	Min	Typ	Max	Units	Diode Maximum Rated Values	Units	Diode Characteristics	Test Conditions	Min	Typ	Max	Units	Module	Units
Collector-Emitter Voltage	1200	V	Collector-Emitter Saturation Voltage	VGE=15V, IC=100A, Tvj=25	-	2.5	3.1	V	Repetitive Peak Reverse Voltage	1200	V	Diode Forward Voltage	IF = 100A, VGE = 0V, Tvj=25	-	2.4	-	V	Module Mounting Torque	3.0-5.0	Nm
Gate-Emitter Voltage	+20	V		VGE=15V, IC=100A, Tvj=125	-	3.0	-	V	Continuous DC Forward Current	100	A		IF = 100A, VGE = 0V, Tvj=125	-	2.5	-	V	Terminal Mounting Torque	2.5-6.0	Nm
Continuous Collector Current	100	A	Gate Threshold Voltage	VGE=VCE, IC=1mA, Tvj=25	5.0	6.0	7.0	V	Repetitive Peak Collector Current	200	A		IF = 100A, VGE = 0V, Tvj=150	-	2.5	2.9	V	Weight	145	g
Repetitive Peak Collector Current	200	A	Total Gate Charge	VGE=-15V+15V	-	0.7	-	uC				Peak Reverse Recovery Current	IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=25	-	55	-	A	Isolation Test Voltage	3.0	kV
Maximum Power Dissipation	565	W	Internal Gate Resistor	Tvj=25	-	5	-						IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=125	-	55	-	A	Module Baseplate Material	Cu
			Input Capacitance	VCE=25V, VGE=0V, f=1MHz	-	4.38	-	nF					IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=150	-	55	-	A	Internal Isolation	basic insulation (class 1, IEC 61140)
			Reverse Transfer Capacitance		-	0.2	-	nF				Reverse Recovery Charge	Tvj=25	-	3.5	-	uC	Electrical Clearance (Terminal to heatsink)	17	mm
			Collector-Emitter Leakage Current	VCE=1200V, VGE=0V, Tvj=25	-	-	1.0	mA					Tvj=125	-	7.5	-	uC	Electrical Clearance (Terminal to terminal)	9.5	mm
			Gate-Emitter Leakage Current, Forward	VGE=20V, VCE=0V, Tvj=25	-	-	200	nA					Tvj=150	-	9.0	-	uC	Surface Creepage Distance (Terminal to heatsink)	17	mm
			Gate-Emitter Leakage Current, Reverse	VGE=-20V, VCE=0V, Tvj=25	-	-	-200	nA					Reverse Recovery Energy	Tvj=25	-	2.5	-	mJ	Surface Creepage Distance (Terminal to terminal)	20	mm
			Turn-on Delay Time	VCE = 600V, IC = 100A, VGE = 15V, RGon = 4.7, Tvj=25	-	57	-	ns					Tvj=125	-	4.2	-	mJ	Comparative Tracking Index	>200
			Turn-on Rise Time	Tvj=25	-	43	-	ns					Tvj=150	-	4.8	-	mJ
			Turn-off Delay Time	VCE = 600V, IC = 100A, VGE = 15V, RGoff = 15, Tvj=25	-	350	-	ns					Thermal Resistance, Junction to Case (Per Diode)	-	0.5	-	K/W
			Turn-off Fall Time	Tvj=25	-	22	-	ns					Temperature Under Switching Condition	-40	-	150
			Turn-on Switching Loss	VCE = 600V, IC = 100A, VGE = 15V, RGon = 4.7, RGoff = 15, L = 80nH, Tvj=25	-	8.8	-	mJ
			Turn-off Switching Loss	Tvj=25	-	2.7	-	mJ
			Thermal Resistance, Junction to Case (Per IGBT)		-	0.22	-	K/W
			Temperature Under Switching Condition	-40	-	150
									Thermal Resistance, Case to Heatsink (Per Module)	-	0.05	-	K/W
									Module Stray Inductance		-	30	-	nH
									Module Lead Resistance (Terminals-Chip)	TC = 25, Per Switch	-	0.65	-	m
									Storage Temperature		-40	-	125