China CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified for sale

CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The CoolMOS C6 600V Power Transistor, specifically the IPx60R380C6 model, offers advanced performance for power management applications. It is designed for high efficiency and reliability, featuring a robust construction that is Pb-free and Halogen-free. This transistor is fully qualified according to JEDEC standards for industrial applications, making it suitable for a wide range of demanding use cases.

Product Attributes

Brand: Infineon
Product Line: CoolMOS C6
Technology: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Plating: Pb-free
Material: Halogen free
Qualification: Fully qualified according to JEDEC for Industrial Applications

Technical Specifications

Model	Voltage Rating	Description
IPx60R380C6	600V	CoolMOS C6 Power Transistor

Technical Specifications

Part Number	Package	Description
IPB60R380C6	PG-TO263	CoolMOS C6 Power Transistor
IHW60R380C6	PG-TO247	CoolMOS C6 Power Transistor
IPI60R380C6	PG-TO220 FullPAK	CoolMOS C6 Power Transistor
IPI60R380C6	PG-TO220 FullPAK	CoolMOS C6 Power Transistor

Technical Specifications

Parameter	Symbol	Value	Unit	Condition
Drain-source voltage	V_DS	600	V
Continuous drain current	I_D	16.5	A	T_C = 25C
Pulsed drain current	I_D,pulse	50	A
Gate-source voltage	V_GS	±20	V
Continuous drain current	I_D	16.5	A	T_C = 25C
Continuous drain current	I_D	10.5	A	T_C = 100C
Pulsed drain current	I_D,pulse	50	A
Gate-source voltage	V_GS	±20	V
Avalanche energy, single pulse	E_AS	165	mJ	I_D = 16.5A, V_DD = 50V
Avalanche current, repetitive	I_AR	16.5	A
Avalanche energy, repetitive	E_AR	165	mJ
Repetitive avalanche current	I_AR	16.5	A
Repetitive avalanche energy	E_AR	165	mJ
Drain-source on-resistance	R_DS(on)	0.38	Ω	V_GS = 10V, I_D = 8.25A
Threshold voltage	V_th	2.5	V	I_D = 1mA
Gate charge	Q_g	53	nC	V_GS = 10V
Input capacitance	C_iss	1250	pF	V_GS = 0V, f = 1MHz
Output capacitance	C_oss	120	pF	V_GS = 0V, f = 1MHz
Reverse transfer capacitance	C_rss	15	pF	V_GS = 0V, f = 1MHz
Total gate charge	Q_g	53	nC	V_GS = 10V
Input capacitance	C_iss	1250	pF	V_GS = 0V, f = 1MHz
Output capacitance	C_oss	120	pF	V_GS = 0V, f = 1MHz
Reverse transfer capacitance	C_rss	15	pF	V_GS = 0V, f = 1MHz
Maximum Junction Temperature	T_j,max	150	C
Storage Temperature	T_stg	-55 to 150	C
Thermal Resistance, Junction-to-Case	R_thJC	0.6	K/W
Thermal Resistance, Junction-to-Ambient	R_thJA	62	K/W
ESD capability	V_ESD	2	kV	Human Body Model (HBM)
ESD capability	V_ESD	200	V	Charged Device Model (CDM)
Package Thermal Resistance	R_thJC	0.6	K/W
Package Thermal Resistance	R_thJA	62	K/W

Technical Specifications

Model	Package	Outline
IPB60R380C6	PG-TO263	TO-263
IHW60R380C6	PG-TO247	TO-247
IPI60R380C6	PG-TO220 FullPAK	TO-220 FullPAK

Technical Specifications

Outline	Dimension	Value (mm)
PG-TO220 FullPAK	A	15.85
	A1	2.54
	b	1.02
	b1	2.54
	b2	1.78
	b3	1.15
	b4	2.41
	c	0.64
	c2	0.89
	D	15.67
	D1	13.75
	E	10.00
	E1	7.50
	e	2.54
	e1	5.02
PG-TO220 FullPAK	H	28.70
	L	16.15
	L1	10.65
	P	3.50
	Q	2.85
	L3	1.27
	L4	4.57
	A2	2.54
	c2	0.89
	b2	1.78
	b3	1.15
	b4	2.41
	c	0.64
	D	15.67
	D1	13.75
PG-TO220 FullPAK	E	10.00
	E1	7.50
	e	2.54
	e1	5.02
	H	28.70
	L	16.15
	L1	10.65
	P	3.50
	Q	2.85
	L3	1.27
	L4	4.57
	A2	2.54
	c2	0.89
	b2	1.78
	b3	1.15
PG-TO220 FullPAK	b4	2.41
	c	0.64
	D	15.67
	D1	13.75
	E	10.00
	E1	7.50
	e	2.54
	e1	5.02
	H	28.70
	L	16.15
	L1	10.65
	P	3.50
	Q	2.85
	L3	1.27
	L4	4.57