Power MOS Transistor Chip Infineon IPC300N20N3X7SA1 designed for industrial multimarket applications
Product Overview
The OptiMOS3 Power MOS Transistor Chip IPC300N20N3 is an N-channel enhancement mode bare die designed for industrial and multimarket applications. It features a drain-source breakdown voltage of 200V and a typical on-resistance of 9.2 m. This bare die is suitable for applications requiring high performance and reliability, with options for die bonding via soldering or gluing. It is manufactured with advanced passivation and metallization systems for robust performance.
Product Attributes
- Brand: OptiMOS3
- Type: Power MOS Transistor Chip
- Channel Type: N-channel enhancement mode
- Package: Sawn on foil
- Backside Metallization: NiV system
- Frontside Metallization: AlSiCu system
- Passivation: Nitride + Imide (on edge structure only)
- Electrostatic Discharge Sensitive Device: According to MIL-STD 883C
- Visual Inspection: AQL 0.65 (according to failure catalogue)
Technical Specifications
| Parameter | Symbol | Unit | Value (Min.) | Value (Typ.) | Value (Max.) | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | V | 200 | - | - | VGS=0 V, ID=1 mA |
| Gate threshold voltage | VGS(th) | V | 2 | 3 | 4 | VDS=VGS, ID=270 A |
| Zero gate voltage drain current | IDSS | A | - | 0.1 | 1 | VGS=0 V, VDS=160 V |
| Gate-source leakage current | IGSS | nA | - | 1 | 100 | VGS=20 V, VDS=0 V |
| Drain-source on-resistance | RDS(on) | m | - | 9.2 2) | 100 3) | VGS=10 V, ID=2.0 A |
| Reverse diode forward on-voltage | VSD | V | - | 1.0 | 1.2 | VGS=0 V, IF=1A |
| Avalanche energy, single pulse | EAS | mJ | - | 40 4) | - | ID =30 A, RGS =25 |
| Die size | - | mm | - | 6 x 5 | - | - |
| Thickness | - | m | - | 250 | - | - |
1) Packaged in a P-TO220-3 (see ref. product)
2) Typical bare die RDS(on); VGS=10 V
3) Limited by wafer test-equipment
4) Wafer tested. For general avalanche capability refer to the datasheet of IPP110N20N3 G
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