CoolSiC Trench MOSFET EasyDUAL module Infineon FF55MR12W1M1HB70BPSA1 with integrated NTC sensor and AlN substrate

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Product Description

EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC

The EasyDUAL module, featuring a CoolSiC Trench MOSFET and PressFIT technology with an integrated NTC temperature sensor, is designed for high-frequency switching applications. Its low inductive design and low switching losses contribute to efficient operation. The module offers rugged mounting with integrated clamps and an AlN substrate for low thermal resistance, making it suitable for demanding industrial applications.

Product Attributes

Brand: Infineon
Technology: CoolSiC Trench MOSFET
Mounting: PressFIT
Features: Integrated NTC temperature sensor, AlN substrate
Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068

Technical Specifications

Parameter	Symbol	Note or test condition	Values	Unit
General Module Characteristics
Stray inductance module	LsCE		14	nH
Module lead resistance, terminals - chip	RCC'+EE'	TH = 25 C, per switch	5.3	m
Storage temperature	Tstg		-40 to 125	C
Mounting force per clamp	F		20 to 50	N
Weight	G		24	g
MOSFET Maximum Rated Values
Drain-source voltage	VDSS	Tvj = 25 C	1200	V
Continuous DC drain current	IDDC	Tvj = 175 C, VGS = 18 V, TH = 125 C	15	A
Repetitive peak drain current	IDRM	verified by design, tp limited by Tvjmax	30	A
Gate-source voltage, max. transient voltage	VGS	D < 0.01	-10/23	V
Gate-source voltage, max. static voltage	VGS		-7/20	V
MOSFET Characteristic Values
Drain-source on-resistance	RDS(on)	ID = 15 A, VGS = 18 V, Tvj = 25 C	52.9	m
Drain-source on-resistance	RDS(on)	ID = 15 A, VGS = 18 V, Tvj = 125 C	85.5	m
Drain-source on-resistance	RDS(on)	ID = 15 A, VGS = 18 V, Tvj = 150 C	98.5	m
Gate threshold voltage	VGS(th)	ID = 6 mA, VDS = VGS, Tvj = 25 C	3.45 to 5.15	V
Total gate charge	QG	VDD = 800 V, VGS = -3/18 V	0.045	C
Input capacitance	CISS	f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C	1.35	nF
Output capacitance	COSS	f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C	0.064	nF
Reverse transfer capacitance	Crss	f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C	0.004	nF
Turn-on energy loss per pulse	Eon	ID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGon = 3.9 , di/dt = 1.8 kA/s (Tvj = 150 C), Tvj = 150 C	0.316	mJ
Turn-off energy loss per pulse	Eoff	ID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGoff = 3.3 , dv/dt = 27.7 kV/s (Tvj = 150 C), Tvj = 150 C	0.042	mJ
Thermal resistance, junction to heat sink	RthJH	per MOSFET, grease = 1 W/(mK)	1.25	K/W
Temperature under switching conditions	Tvj op		-40 to 150	C
Body Diode (MOSFET) Characteristic Values
Forward voltage	VSD	ISD = 15 A, VGS = -3 V, Tvj = 25 C	4.2 to 5.35	V
Forward voltage	VSD	ISD = 15 A, VGS = -3 V, Tvj = 150 C	3.85	V
NTC-Thermistor Characteristic Values
Rated resistance	R25	TNTC = 25 C	5	k
B-value	B25/100	R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]	3433	K