China Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion for sale

Compact and robust Infineon TDB6HK180N16RR IGBT module featuring copper base plate for power conversion

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The TDB6HK180N16RR is an IGBT module designed for applications such as active rectifiers and half-controlled B6-bridges. It features high power density, mechanical robustness, and a compact design with an isolated base plate and copper base plate. The module utilizes Al2O3 substrate with low thermal resistance and solder contact technology, ensuring reliable performance and durability. It is RoHS compliant and UL approved (E83335).

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Al2O3 Substrate, Copper Base Plate
Color: Not specified
Certifications: UL approved (E83335), RoHS compliant

Technical Specifications

Component	Parameter	Value	Unit	Conditions
Diode, Rectifier	VRRM	1600	V	Tvj = 25C
	IFRMSM	150	A	TC = 80C
	IRMSM	180	A	TC = 80C
	IFSM	1600 / 1400	A	tp = 10 ms, Tvj = 25C / 150C
	It	13000 / 9500	As	tp = 10 ms, Tvj = 25C / 150C
	VF	1.20	V	Tvj = 150C, IF = 150 A
	RthJC	0.35	K/W	per diode
Thyristor-Rectifier	VRRM	1600	V	Tvj = 25C
	IFRMSM	150	A	TC = 80C
	IRMSmax	180	A	TC = 80C
	IFSM	1550 / 1300	A	tP = 10ms, Tvj = 25C / 130C
	It	12000 / 8450	As	tP = 10ms, Tvj = 25C / 130C
	(di/dt)cr	100	A/s	f = 50Hz, iGM = 0.6A, diG/dt = 0.6A/s
	VF	1.30	V	Tvj = 130C, IF = 150 A
	IGT	100	mA	Tvj = 25C, vD = 6 V
	VGT	2.0	V	Tvj = 25C, vD = 6 V
	RthJC	0.30	K/W	per Thyristor
IGBT, Brake-Chopper	VCES	1200	V	Tvj = 25C
	IC nom	100	A	TC = 80C, Tvj = 175C
	ICRM	200	A	tP = 1 ms
	Ptot	515	W	TC = 25C, Tvj = 175C
	VGES	+/-20	V
	VCE sat	1.75 / 2.05 / 2.10 / 2.20	V	IC = 100 A, VGE = 15V, Tvj = 25C / 125C / 150C
	VGEth	5.0 / 5.8 / 6.5	V	IC = 3.55 mA, VCE = VGE, Tvj = 25C
	QG	0.80	C	VGE = -15 V ... +15 V
	Cies	6.30	nF	f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
	Cres	0.27	nF	f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
	td on	0.16 / 0.17	s	IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C / 125C / 150C
	tr	0.03 / 0.04	s	IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 1.6 , Tvj = 25C / 125C / 150C
	td off	0.33 / 0.43 / 0.45	s	IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C / 125C / 150C
	tf	0.08 / 0.145 / 0.17	s	IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 1.6 , Tvj = 25C / 125C / 150C
	Eon	5.50 / 8.50 / 9.50	mJ	IC = 100 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, RGon = 1.6 , Tvj = 25C / 125C / 150C
	Eoff	5.50 / 8.50 / 9.50	mJ	IC = 100 A, VCE = 600 V, LS = 30 nH, VGE = 15 V, RGoff = 1.6 , Tvj = 25C / 125C / 150C
Diode, Brake-Chopper	VRRM	1200	V	Tvj = 25C
	IF	50	A
	IFRM	100	A	tP = 1 ms
	It	510	As	VR = 0 V, tP = 10 ms, Tvj = 125C
	VF	1.70 / 1.65 / 1.65 / 2.15	V	IF = 50 A, VGE = 0 V, Tvj = 25C / 125C / 150C
	IRM	54.0 / 60.0 / 63.0	A	IF = 50 A, - diF/dt = 3000 A/s, VR = 600 V, Tvj = 25C / 125C / 150C
	Qr	5.50 / 8.80 / 10.0	C	IF = 50 A, - diF/dt = 3000 A/s, VR = 600 V, Tvj = 25C / 125C / 150C