Power semiconductor JIAENSEMI JNG15N120HS2 NPT IGBT 1200V 15A suitable for soft switching and energy systems
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Product Description
Product Overview
JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. This device features 1200V, 15A rating with a typical VCE(sat) of 2.2V. It provides high-speed switching, higher system efficiency, and soft current turn-off waveforms with square RBSOA using NPT technology.
Product Attributes
- Brand: JIAEN
- Technology: NPT IGBT
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 20 | V | |||
| Continuous Collector Current (TC=25) | IC | 30 | A | |||
| Continuous Collector Current (TC=100) | IC | 15 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 45 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 15 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 45 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 180 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 70 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.68 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 0.98 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | 250 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE=30V, VCE= 0V | 100 | nA | ||
| Gate Leakage Current, Reverse | IGES | VGE= -30V, VCE= 0V | -100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4 | 6 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 15A | 2.2 | 2.7 | V | |
| Total Gate Charge | Qg | VCC=960V VGE=15V IC=15A | 70 | nC | ||
| Gate-Emitter Charge | Qge | 23 | nC | |||
| Gate-Collector Charge | Qgc | 24 | nC | |||
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | 30 | ns | ||
| Turn-on Rise Time | tr | 35 | ns | |||
| Turn-off Delay Time | td(off) | 260 | ns | |||
| Turn-off Fall Time | tf | 135 | ns | |||
| Turn-on Switching Loss | Eon | 1.3 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.9 | mJ | |||
| Total Switching Loss | Ets | 2.2 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 100kHz | 550 | pF | ||
| Output Capacitance | Coes | 180 | pF | |||
| Reverse Transfer Capacitance | Cres | 110 | pF | |||
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=15A | 2.3 | 2.8 | V | |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 15A dIF/dt = 400A/us | 240 | ns | ||
| Diode peak Reverse Recovery Current | Irr | 13 | A | |||
| Diode Reverse Recovery Charge | Qrr | 2000 | nC | |||
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